BTA10-200 Sirectifier Semiconductors, BTA10-200 Datasheet
BTA10-200
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BTA10-200 Summary of contents
Page 1
... I = 500 1 dV/dt ( gate open Tj = 125°C D DRM (dI/dt)c (2) Without snubber BTB/BTA10 Dimensions TO-220AB Parameter TO-220AB 120 µs Quadrant III MAX III MAX III Tj = 125°C MIN. ...
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... MIN 125°C MIN. Test Conditions Tj = 25° 125° 125° 25° 125°C Parameter Voltage (xxx) Sensitivity ~~ 200 V 1000 Marking Weight 2.3 g BTB/BTA10 Value Unit 50 mA 100 1 100 V/µs 400 10 V/µs Value Unit MAX ...
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... 110 100 90 80 Non repetitive initial=25° epetitive T c=95° Number of c ycles 100 BTB/BTA10 F ig on-state current vers us cas e temperature (full cycle ...
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... R elative varia tion of critical rate of decreas e of main current vers us temperature. (dI/dt (dI/dt pec ified (° BTB/BTA10 F ig ela tive variation of critica l rate of decreas e of main current versus (dV /dt)c (typical values). (dI/dt)c [(dV /dt pec ified (dI/dt)c 2.0 1.8 C 1.6 B 1.4 1.2 1.0 0.8 0.6 0.4 0.1 1.0 100 ...