BTA10-200 Sirectifier Semiconductors, BTA10-200 Datasheet - Page 3

• Manufacturer Part Number: BTA10-200
• Description: Discrete Triacs Non-isolated/isolated
• Manufacturer: Sirectifier Semiconductors

110
100
F ig. 1 : Maximum power dis s ipation vers us R MS
on-s ta te current (full cycle).
F ig. 3 : R elative variation of thermal impeda nce
versus pulse duration.
1E +0
F ig.
number of cycles .
13
12
11
10
1E -1
1E -2
90
80
70
60
50
40
30
20
10
9
8
7
6
5
4
3
2
1
0
0
0
P (W)
1
1E -3
IT S M (A )
K =[Zth/R th]
5 :
1
Zth(j-c )
1E -2
S urge peak on-state current vers us
R epetitive
T c=95°C
2
3
10
Non repetitive
T j initial=25°C
Number of c ycles
1E -1
IT (R MS ) (A )
4
Zth(j-a)
Discrete Triacs(Non-Isolated/Isolated)
tp (s )
5
1E +0
6
100
1E +1
7
BTB/BTA10
t=20ms
One cycle
8
1E +2 5E +2
9
1000
10
12
11
10
100
F ig.
temperature (full cycle).
F ig.
values ).
F ig.
current for a
tp < 10ms, and corres ponding value of I²t.
1000
9
8
7
6
5
4
3
2
1
0
10
100
1
0
10
0.5
IT (R MS ) (A )
0.01
IT M (A )
IT S M (A ),I² t (A ² s )
V to = 0.85 V
R d = 40 m
T j max.
2 : R MS on-state current vers us cas e
6 : Non-repetitive s urge pea k on-s tate
4 :
1.0
25
W
On-s tate
dI/dt limitation:
1.5
50A /µs
T j=25°C
2.0
0.10
s inus oidal puls e
50
T j max
cha racteris tics
2.5
T c (°C )
V T M (V )
tp (ms )
3.0
75
1.00
3.5
4.0
100
B TA
with width
(maximum
T j initial=25°C
IT S M
I²t
B T B
4.5
10.00
125
5.0