TIG110GMH Sanyo Semicon Device, TIG110GMH Datasheet

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... The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. Package Dimensions unit : mm (typ) 7504-003 3.4 16.0 2.8 2.0 0 5.45 5.45 TIG110GMH SANYO Semiconductors N-Channel Non Punch Through IGBT High Power High Speed Switching Applications Symbol Conditions V CES V GES Limited by Tjmax Limited by Tjmax I CP ...

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... Qg Qgs V CE =300V =15V =15A Qgd Symbol Conditions Rth(j-c) Tc=25°C (SANYO’s ideal heat dissipation condition)*3 Rth(j- 15V Diode TIG110GMH V CLAMP =600V V GE 90% 10 90% 10% 10 (off) t off Ratings min typ 600 Tj=25° ...

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... Collector-to-Emitter Voltage Gate-to-Emitter Voltage Gate-to-Emitter Voltage TIG110GMH 100 Tj= --40 ° 3.0 3.5 4.0 4.5 5.0 0.5 IT16384 100 ...

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... Total Gate Charge Case Temperature ° C TIG110GMH 1000 V CC =300V VClamp=600V L=200μ =15V R G =30Ω 100 IT16392 10000 V CC =300V VClamp=600V L=200μ =15V 1000 R G =30Ω ...

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... SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of September, 2011. Specifi cations and information herein are subject to change without notice. TIG110GMH ...