TIG110GMH Sanyo Semicon Device, TIG110GMH Datasheet - Page 3

• Manufacturer Part Number: TIG110GMH
• Description: N-Channel Non Punch Through IGBT
• Manufacturer: Sanyo Semicon Device

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100
100
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
0
5
4
3
2
1
0
5
4
3
2
1
0
0.5
0.5
5
5
Tj=125 ° C
1.0
1.0
Collector-to-Emitter Voltage, V CE -- V
Collector-to-Emitter Voltage, V CE -- V
Gate-to-Emitter Voltage, V GE -- V
Gate-to-Emitter Voltage, V GE -- V
7
7
1.5
1.5
2.0
2.0
V CE -- V GE
V CE -- V GE
I C -- V CE
I C -- V CE
9
9
2.5
2.5
3.0
3.0
11
11
3.5
3.5
4.0
4.0
13
13
Tj= --40 ° C
Tj= --40 ° C
Tj=125 ° C
4.5
4.5
IT16386
IT16384
IT16388
IT16390
TIG110GMH
5.0
5.0
15
15
10000
1000
100
100
100
10
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
0
5
4
3
2
1
0
7
5
3
2
7
5
3
2
7
5
3
2
0.5
1.0
Gate-to-Emitter Threshold Voltage, V GE (off) -- V
3
5
V CE =10V
V CC =300V
VClamp=600V
L=200μH
V GE =15V
I C =15A
1.0
2
4
Collector-to-Emitter Voltage, V CE -- V
3
7
Gate-to-Emitter Voltage, V GE -- V
1.5
5 7
5
t off , t d (off), t f -- R G
Gate Resistance, R G -- Ω
2.0
10
I C -- V GE (off)
V CE -- V GE
6
I C -- V CE
9
2.5
2
3
7
3.0
5 7
11
8
100
3.5
9
4.0
2
13
3
Tj=25 ° C
Tj=25 ° C
No.9018-3/5
10
4.5
IT16385
IT16387
IT16389
5 7
IT16391
1000
5.0
11
15
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