GT35J321 Toshiba, GT35J321 Datasheet - Page 2

• Manufacturer Part Number: GT35J321
• Description: Fourth Generation IGBT
• Manufacturer: Toshiba

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Electrical Characteristics
Gate leakage current
Collector cut−off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Switching time
Diode forward voltage
Reverse recovery time
Note 1: Switching time measurement circuit and input/output waveforms
0
Characteristics
Rise time
Turn-on time
Fall time
Turn-off time
R
G
V
(Ta = 25°C)
R
CC
L
V
V
Symbol
GE (OFF)
CE (sat)
I
I
C
GES
CES
t
t
V
t
on
off
t
t
ies
rr
r
f
F
0
0
V
V
V
V
I
I
V
Resistive Load
V
V
I
I
C
C
F
F
I
GE
CE
C
GE
CE
CE
CC
GG
= 15 A, V
= 15 A, di / dt = −100 A / μs
= 50 mA, V
= 50 A, V
2
= 600 V, V
= 10 V, V
= 300 V, I
= ±25 V, V
= ±15 V, R
t
90%
d (off)
Test Condition
GE
GE
CE
GE
C
= 0 V
GE
= 15 V
CE
G
t
90%
off
= 50 A
= 5 V
t
= 0 V, f = 1 MHz
f
= 39 Ω
= 0 V
= 0 V
10%
(Note 1)
10%
10%
Min
3.0
―
―
―
―
―
―
―
―
―
―
t
on
t
2500
r
Typ.
0.24
0.33
0.19
0.51
1.9
―
―
―
―
―
90%
GT35J321
2008-03-26
±500
Max
0.32
1.0
6.0
2.3
2.0
0.2
―
―
―
―
Unit
mA
nA
pF
μs
μs
V
V
V