GT35J321 Toshiba, GT35J321 Datasheet - Page 5

• Manufacturer Part Number: GT35J321
• Description: Fourth Generation IGBT
• Manufacturer: Toshiba

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300
100
50
40
30
20
10
50
40
30
20
10
50
30
10
0
0
5
3
1
25
0
1
Common emitter
V GE = 0 V
3
0.4
50
Case temperature
Reverse voltage V
Forward voltage V
5
Tc = 125°C
10
0.8
I
75
C
C
I
max – Tc
F
j
– V
– V
25
30
F
R
100
1.2
Tc
50
F
R
−40
(V)
(V)
100
(°C)
Common emitter
V GE = 15 V
125
1.6
f = 1 MHz
Tc = 25°C
300 500
150
2.0
5
200
100
10
10
10
10
10
10
50
30
10
0
− 1
− 2
− 3
10
5
3
1
2
1
0
0
− 5
t rr
I rr
10
− 4
10
8
6
4
2
0
4
0
10
I rr
Forward current I
t rr
− 3
Pulse width t
40
8
10
I
r
rr
th (t)
− 2
, t
I
di/dt (A/μs)
rr
rr
80
, t
– t
– I
10
rr
w
− 1
w
F
12
– di/dt
F
Diode stage
Common collector
I F = 15 A
Tc = 25°C
120
(s)
10
IGBT stage
(A)
Common emitter
di/dt = −100 A/μs
V GE = 0 V
Tc = 25°C
0
16
Tc = 25°C
160
10
GT35J321
1
2008-03-26
200
10
20
500
300
100
50
30
10
2