SIA429DJT Vishay Siliconix, SIA429DJT Datasheet - Page 3

• Manufacturer Part Number: SIA429DJT
• Description: P-Channel 20 V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

www.DataSheet4U.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 67038
S10-2538-Rev. A, 08-Nov-10
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
30
25
20
15
10
On-Resistance vs. Drain Current and Gate Voltage
5
0
0
8
6
4
2
0
0.0
0
0
V
I
GS
D
= 10 A
= 1.5 V
0.5
5
10
V
DS
Output Characteristics
Q
V
- Drain-to-Source Voltage (V)
g
DS
1.0
- Total Gate Charge (nC)
10
I
D
= 10 V
- Drain Current (A)
Gate Charge
20
V
GS
V
DS
1.5
15
= 1.8 V
= 5 V
V
30
GS
2.0
V
20
DS
= 5 V thru 2 V
= 16 V
V
V
V
V
GS
GS
GS
GS
40
2.5
= 1 V
25
= 1.5 V
= 2.5 V
= 4.5 V
New Product
3.0
50
30
3500
3000
2500
2000
1500
1000
1.65
1.45
1.25
1.05
0.85
0.65
500
20
16
12
0
- 50
8
4
0
0.0
0
On-Resistance vs. Junction Temperature
C
- 25
rss
C
oss
0.4
V
V
V
DS
T
5
0
GS
Transfer Characteristics
GS
J
T
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
C
= 4.5 V; 2.5 V; I
C
= 125 °C
iss
25
Capacitance
0.8
T
C
= 25 °C
V
10
50
GS
Vishay Siliconix
= 1.5 V; I
1.2
SiA429DJT
D
V
75
= 6 A
GS
T
= 1.8 V; I
C
D
100
www.vishay.com
15
= - 55 °C
= 1 A
1.6
125
D
= 6 A
150
2.0
20
3