STS1NC60 ST Microelectronics, STS1NC60 Datasheet - Page 2

• Manufacturer Part Number: STS1NC60
• Description: N-CHANNEL PowerMESH MOSFET
• Manufacturer: ST Microelectronics

STS1NC60
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON
DYNAMIC
2/8
Rthj-amb
V
Rthj-pcb
Symbol
Symbol
Symbol
Symbol
R
V
(BR)DSS
g
(1)
I
I
C
DS(on)
C
E
GS(th)
C
fs
I
GSS
DSS
AR
T
oss
AS
rss
iss
(1)
l
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Thermal Resistance Junction-PC Board
Thermal Resistance Junction-ambient Max
(Surface Mounted)
Maximum Lead Temperature For Soldering Purpose
Parameter
Parameter
Parameter
j
DS
= 25 °C, I
= 0)
GS
= 0)
D
= I
j
max)
AR
Parameter
, V
DD
I
V
V
V
V
V
V
I
D
D
V
= 50 V)
DS
DS
GS
DS
GS
DS
DS
= 250 µA, V
= 0.5 A
= Max Rating
= Max Rating, T
= V
> I
= ± 30V
= 10V, I
= 25V, f = 1 MHz, V
D(on)
Test Conditions
Test Conditions
Test Conditions
GS
, I
D
x R
D
= 0.5 A
GS
= 250µA
DS(on)max,
= 0
C
= 125 °C
GS
= 0
Min.
Min.
Min.
600
2
260
50
60
Max Value
0.3
60
Typ.
Typ.
Typ.
0.87
108
2.5
12
18
3
Max.
±100
Max.
Max.
10
15
1
4
°C/W
°C/W
Unit
mJ
°C
A
Unit
Unit
Unit
µA
µA
nA
pF
pF
pF
V
V
S