STS1NC60 ST Microelectronics, STS1NC60 Datasheet - Page 3

• Manufacturer Part Number: STS1NC60
• Description: N-CHANNEL PowerMESH MOSFET
• Manufacturer: ST Microelectronics

ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Safe Operating Area
Symbol
Symbol
Symbol
I
V
SDM
t
t
I
SD
r(Voff)
d(on)
Q
Q
RRM
I
2. Pulse width limited by safe operating area.
Q
Q
SD
t
t
t
t
rr
gs
gd
c
r
f
rr
g
(1)
(2)
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Off-voltage Rise Time
Fall Time
Cross-over Time
Parameter
Parameter
Parameter
V
R
(see test circuit, Figure 3)
V
V
I
I
V
(see test circuit, Figure 5)
V
R
(see test circuit, Figure 5)
SD
SD
DD
DD
GS
DD
G
DD
G
= 4.7
= 4.7
= 0.3 A, V
= 1A, di/dt = 100A/µs,
= 300V, I
= 480V, I
= 10V
= 25V, Tj = 150°C
= 480V, I
Test Conditions
Test Conditions
Test Conditions
V
V
GS
GS
D
D
D
GS
= 0.5A
= 1A,
= 1 A,
= 10V
= 10V
Thermal Impedance
= 0
Min.
Min.
Min.
Typ.
Typ.
Typ.
450
720
7.2
7.3
3.4
2.5
3.2
33
43
11
8
Max.
Max.
Max.
0.3
1.2
1.6
10
STS1NC60
Unit
Unit
Unit
nC
nC
nC
µC
ns
ns
ns
ns
ns
ns
A
A
V
A
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