SSM3J14T Toshiba Semiconductor, SSM3J14T Datasheet - Page 2

• Manufacturer Part Number: SSM3J14T
• Description: TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
• Manufacturer: Toshiba Semiconductor

Electrical Characteristics
Switching Time Test Circuit
Precaution
Gate leakage current
Drain-source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-source on resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Note 3: Pulse test
(a) Test circuit
for this product. For normal switching operation, V
requires lower voltage than V
-4 V
V
(relationship can be established as follows: V
Please take this into consideration for using the device.
V
th
GS
0
can be expressed as voltage between gate and source when low operating current value is I
10 ms
recommended voltage of -4 V or higher to turn on this product.
Characteristic
IN
Turn-on time
Turn-off time
V
DD
th
(Ta = = = = 25°C)
OUT
.
V
V
R
V
R
D.U. < = 1%
V
Common source
Ta = 25°C
Symbol
(BR) DSS
(BR) DSX
DS (ON)
DD
IN
I
G
I
C
|Y
C
C
GSS
DSS
V
t
t
oss
on
off
: t
rss
iss
= 4.7 W
th
fs
= -10 V
r
|
, t
f
< 5 ns
GS (off)
V
I
I
V
V
V
I
I
I
V
V
V
V
V
D
D
D
D
D
GS
DS
DS
DS
DS
DS
DS
DD
GS
= -1 mA, V
= -1 mA, V
= -1.35 A, V
= -1.35 A, V
= -1.35 A, V
GS (on)
2
= -30 V, V
= -5 V, I
= -5 V, I
= -15 V, V
= -15 V, V
= -15 V, V
= ±16 V, V
= -15 V, I
= 0~-4 V, R
< V
(b) V
(c) V
th
Test Condition
requires higher voltage than V
D
D
< V
GS
GS
D
GS
GS
GS
GS
= -0.1 mA
= -1.35 A
GS
GS
GS
DS
= -1 A
OUT
IN
G
= 0
= 20 V
GS (on)
= -10 V (Note 3)
= -4.5 V (Note 3)
= -4.0 V (Note 3)
= 0
= 0
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0, f = 1 MHz
= 10 W
)
0 V
-4 V
V
V
DS (ON)
DD
(Note 3)
-0.8
Min
-30
-15
2.0
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
10%
t
on
t
r
th
Typ.
106
120
413
113
¾
63
77
29
29
¾
¾
¾
¾
¾
10%
90%
and V
SSM3J14T
2002-04-17
D
GS (off)
Max
-2.0
90%
145
170
t
±1
¾
¾
-1
¾
85
¾
¾
¾
¾
¾
off
= -100 mA
t
f
Unit
mW
mA
mA
pF
pF
pF
ns
V
V
V
S