SSM3J14T Toshiba Semiconductor, SSM3J14T Datasheet - Page 3

• Manufacturer Part Number: SSM3J14T
• Description: TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
• Manufacturer: Toshiba Semiconductor

300
250
200
150
100
300
250
200
150
100
-6
-4
-2
50
50
0
0
0
-25
0
0
Common source
Ta = 25°C
Common source
I D = -1.35 A
-10 V
-1
0
Drain-source voltage V DS (V)
Ambient temperature Ta (°C)
-5 V
-0.5
-2
25
Drain current I D (A)
R
R
DS (ON)
DS (ON)
I
-4 V
-3
50
D
– V
V GS = -4 V
-1
V GS = -4 V
DS
-4
75
-3.5 V
– Ta
–I
D
Common source
Ta = 25°C
100
-5
-1.5
-10 V
V GS = -2.5V
-4.5 V
-4.5 V
-10 V
125
-6
-3 V
150
-2
-7
3
-10000
-1000
-0.01
-100
1000
-0.1
0.03
-10
100
0.3
0.1
-1
10
10
-0.01
3
1
0
0
Common source
V DS = -5 V
Gate-source voltage V GS (V)
Gate-source voltage V GS (V)
-1
-5
100°C
Drain current I D (A)
-0.1
R
DS (ON)
I
|Y
D
fs
– V
-25°C
-10
-2
| – I
25°C
GS
– V
D
Ta = 25°C
GS
-1
Common source
V DS = -5 V
Ta = 25°C
Common source
I D = -1.35 A
-15
-3
Ta = 100°C
-25°C
SSM3J14T
2002-04-17
-20
-10
-4