SSM6J08FU Toshiba Semiconductor, SSM6J08FU Datasheet

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SSM6J08FU

Manufacturer Part Number
SSM6J08FU
Description
Power Management Switch
Manufacturer
Toshiba Semiconductor
Datasheets

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Power Management Switch
DC-DC Converter
Absolute Maximum Ratings
Marking
Handling Precaution
Small Package
Low on Resistance : R
Low Gate Threshold Voltage
Drain-Source voltage
Gate-Source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature range
Note:
Note 1: Mounted on FR4 board
Note 2: The pulse width limited by max channel temperature.
environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and
containers and other objects that come into direct contact with devices should be made of anti-static materials.
When handling individual devices (which are not yet mounted on a circuit board), be sure that the
6
1
K D D
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.32 mm
Characteristics
5
2
4
3
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
: R
on
on
DC
Pulse
= 0.18 Ω (max) (@V
= 0.26 Ω (max) (@V
Equivalent Circuit
I
SSM6J08FU
(Ta = 25°C)
DP
P
Symbol
D
V
V
T
(Note 2)
T
GSS
6
1
(Note 1)
I
DS
stg
D
ch
5
2
GS
GS
= −4 V)
= −2.5 V)
−55~150
4
3
Rating
−1.3
−2.6
−20
±12
300
150
2
1
× 6) Fig: 1.
Unit
mW
°C
°C
V
V
A
Fig 1: 25.4 mm × 25.4 mm × 1.6 t,
Cu Pad: 0.32 mm
Weight: 6.8 mg (typ.)
JEDEC
JEITA
TOSHIBA
0.4 mm
SSM6J08FU
2-2J1D
2007-11-01
2
× 6
Unit: mm

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