SSM6J08FU Toshiba Semiconductor, SSM6J08FU Datasheet
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SSM6J08FU
Manufacturer Part Number
SSM6J08FU
Description
Power Management Switch
Manufacturer
Toshiba Semiconductor
Datasheets
1.SSM6J08FU.pdf
(6 pages)
2.SSM6J08FU.pdf
(6 pages)
3.SSM6J08FU.pdf
(6 pages)
4.SSM6J08FU.pdf
(6 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SSM6J08FU
Manufacturer:
TOSHIBA
Quantity:
51 000
Part Number:
SSM6J08FU
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Power Management Switch
DC-DC Converter
•
•
•
Absolute Maximum Ratings
Marking
Handling Precaution
Small Package
Low on Resistance : R
Low Gate Threshold Voltage
Drain-Source voltage
Gate-Source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature range
Note:
Note 1: Mounted on FR4 board
Note 2: The pulse width limited by max channel temperature.
environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and
containers and other objects that come into direct contact with devices should be made of anti-static materials.
When handling individual devices (which are not yet mounted on a circuit board), be sure that the
6
1
K D D
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.32 mm
Characteristics
5
2
4
3
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
: R
on
on
DC
Pulse
= 0.18 Ω (max) (@V
= 0.26 Ω (max) (@V
Equivalent Circuit
I
SSM6J08FU
(Ta = 25°C)
DP
P
Symbol
D
V
V
T
(Note 2)
T
GSS
6
1
(Note 1)
I
DS
stg
D
ch
5
2
GS
GS
= −4 V)
= −2.5 V)
−55~150
4
3
Rating
−1.3
−2.6
−20
±12
300
150
2
1
× 6) Fig: 1.
Unit
mW
°C
°C
V
V
A
Fig 1: 25.4 mm × 25.4 mm × 1.6 t,
Cu Pad: 0.32 mm
Weight: 6.8 mg (typ.)
JEDEC
JEITA
TOSHIBA
0.4 mm
SSM6J08FU
2-2J1D
2007-11-01
2
―
―
× 6
Unit: mm