SSM6J08FU Toshiba Semiconductor, SSM6J08FU Datasheet

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SSM6J08FU

Manufacturer Part Number
SSM6J08FU
Description
Power Management Switch
Manufacturer
Toshiba Semiconductor
Datasheets

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Power Management Switch
DC-DC Converter
·
·
·
Maximum Ratings
Marking
Handling Precaution
Small Package
Low on Resistance : R
Low Gate Threshold Voltage
Drain-Source voltage
Gate-Source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature range
Note1:
Note2:
environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and
containers and other objects that come into direct contact with devices should be made of anti-static materials.
When handling individual devices (which are not yet mounted on a circuit board), be sure that the
6
1
K D D
Mounted on FR4 board
(25.4 mm ´ 25.4 mm ´ 1.6 t, Cu Pad: 0.32 mm
The pulse width limited by max channel temperature.
Characteristics
5
2
4
3
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
: R
(Ta = = = = 25°C)
on
on
DC
Pulse
= 0.18 Ω (max) (@V
= 0.26 Ω (max) (@V
Equivalent Circuit
I
SSM6J08FU
DP
P
Symbol
D
V
V
T
(Note 2)
T
6
1
GSS
(Note 1)
I
DS
stg
D
ch
5
2
GS
GS
= −4 V)
= −2.5 V)
-55~150
4
3
Rating
-1.3
-2.6
-20
±12
300
150
2
1
´ 6) Fig: 1.
Unit
mW
°C
°C
V
V
A
Fig 1: 25.4 mm ´ ´ ´ ´ 25.4 mm ´ ´ ´ ´ 1.6 t,
Cu Pad: 0.32 mm
Weight: 6.8 mg (typ.)
JEDEC
JEITA
TOSHIBA
0.4 mm
SSM6J08FU
2-2J1D
2003-02-19
2
´ ´ ´ ´ 6
Unit: mm

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