SSM6J21TU Toshiba Semiconductor, SSM6J21TU Datasheet

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SSM6J21TU

Manufacturer Part Number
SSM6J21TU
Description
High Current Switching Applications
Manufacturer
Toshiba Semiconductor
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SSM6J21TU
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
www.DataSheet4U.com
High Current Switching Applications
Absolute Maximum Ratings
Handling Precaution
is protected against electrostatic discharge. Operators should wear anti-static clothing and use containers and
other objects that are made of anti-static materials.
Marking
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
Note:
Note 1: Mounted on FR4 board.
Suitable for high-density mounting due to compact package
Low on resistance:
Drain-Source voltage
Gate-Source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature range
6
1
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm
KPA
Characteristics
5
2
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ)
4
3
DC
Pulse
R
on
= 88 mΩ (max) (@V
Equivalent Circuit
(Ta = 25°C)
SSM6J21TU
Symbol
(Note 1)
V
V
T
I
T
GSS
DP
P
I
DS
stg
D
ch
D
6
1
GS
= -2.5 V)
−55~150
5
2
Rating
2
±12
500
150
-12
-3
-6
1
)
4
3
Unit
mW
°C
°C
V
V
A
Weight: 7 mg (typ.)
JEDEC
JEITA
TOSHIBA
1,2,5,6 : Drain
3
4
: Gate
: Source
SSM6J21TU
2-2T1D
2007-11-01
-
-
Unit: mm

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SSM6J21TU Summary of contents

Page 1

... Symbol Rating V -12 DS ±12 V GSS Pulse 500 (Note 1) T 150 ch −55~150 T stg 2 ) Equivalent Circuit SSM6J21TU Unit V V 1,2,5,6 : Drain 3 : Gate Source mW °C °C JEDEC - JEITA - TOSHIBA 2-2T1D Weight (typ.) 2007-11-01 Unit: mm ...

Page 2

... DS − off ( out ( OUT DD requires higher voltage than V GS (on) < V < (off (on) 2 SSM6J21TU Min Typ − − − - − − − GS =-0.1 mA − -0.5 = -1.5 A − (Note2) 4 − (Note2) 35 − ...

Page 3

... Common Source Ta = 25°C -1.8V VGS=-1.5V -1 -1.5 -2 (V) DS – (ON) D -2.5V - (A) D – (ON) -2 100 150 3 SSM6J21TU I – -10000 Common Source -1000 -100 Ta = 100°C -10 25°C -1 −25°C -0.1 -0.01 0 -0.5 -1 -1.5 -2 Gate-source V ( – V ...

Page 4

... D Common Source 25° (nC – 0.6 0.8 1 1.2 ( SSM6J21TU C – 5000 3000 C iss 1000 500 C oss 300 C rss 100 50 Common Source Ta = 25° MHz -0.1 -1 -10 Drain-Source voltage V ( – ...

Page 5

... Pulse width t Safe operating area Mounted on FR4 board (25.4 mm × 25.4 mm × 1 pad: 645 max (pulsed ms* 10 ms* 10s -10 -30 -100 ( SSM6J21TU – 100 1000 ( – 1.2 Mounted on FR4 board (25.4 mm × 25.4 mm × 1 Pad: 645 ...

Page 6

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 SSM6J21TU 20070701-EN GENERAL 2007-11-01 ...

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