SSM6J21TU Toshiba Semiconductor, SSM6J21TU Datasheet - Page 2

• Manufacturer Part Number: SSM6J21TU
• Description: High Current Switching Applications
• Manufacturer: Toshiba Semiconductor

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Electrical Characteristics
Switching Time Test Circuit
Precaution
this product. For normal switching operation, V
lower voltage than V
(Relationship can be established as follows: V
V
Please take this into consideration for using the device.
Note2: Pulse test
Gate leakage current
Drain-Source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-Source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
(a) Test Circuit
th
can be expressed as voltage between gate and source when low operating current value is I
−2.5 V
0
V
R
D.U. < = 1%
V
Common Source
Ta = 25°C
Characteristics
DD
IN
G
10 μs
: t
= 4.7 Ω
= -10 V
r
, t
f
< 5 ns
Turn-on time
Turn-off time
th.
in
R
G
I
D
(Ta = 25°C)
V
V
R
V
Symbol
(BR) DSS
(BR) DSX
out
⏐Y
DS (ON)
DD
I
I
C
C
C
GSS
DSS
V
t
t
oss
on
off
iss
rss
th
fs
⏐
GS (off)
GS (on)
V
I
I
V
V
V
I
I
V
V
V
−
D
D
D
D
(b) V
(c) V
GS
DS
DS
DS
DS
DS
DS
< V
= -1 mA, V
= -1 mA, V
= -1.5 A, V
= -1.5 A, V
= ±10 V, V
= -12 V, V
= -3 V, I
= -3 V, I
= -10 V, V
= -10 V, V
= -10 V, V
requires higher voltage than V
th
2
OUT
IN
< V
Test Condition
D
D
GS
GS
GS
GS
GS (on)
GS
=-0.1 mA
= -1.5 A
GS
GS
GS
DS
= 0
= +8 V
= -4 V
= -2.5 V
= 0
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0
V
)
DS (ON)
−2.5 V
V
0 V
DD
(Note2)
(Note2)
(Note2)
10%
t
on
th
Min
-0.5
t
-12
4.3
r
-4
and V
−
−
−
−
−
−
−
−
−
10%
90%
GS (off)
1300
Typ.
330
400
35
50
68
76
−
−
−
−
−
−
SSM6J21TU
D
90%
t
off
= -100 μA for
t
f
2007-11-01
requires
Max
-1.1
±1
50
88
-1
−
−
−
−
−
−
−
−
Unit
mΩ
μA
μA
pF
pF
pF
ns
V
V
S