SSM6P36FE Toshiba Semiconductor, SSM6P36FE Datasheet

SSM6P36FE

Manufacturer Part Number

SSM6P36FE

Description

Power Management Switches

Manufacturer

Toshiba Semiconductor

Datasheet

1.SSM6P36FE.pdf (5 pages)

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Part Number:

SSM6P36FE

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○ Power Management Switches

•

Absolute Maximum Ratings (Ta = 25 °C)

(Common to the Q1, Q2)

Marking

Handling Precaution

protected against static electricity. Operators should wear anti-static clothing, and containers and other objects that come

into direct contact with devices should be made of anti-static materials.

Usage Considerations

SSM6P36FE). Then, for normal switching operation, V

th.

When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is

Let V

Take this into consideration when using the device.

Low ON-resistance:

Note 1: Total rating

1.5-V drive

Drain-source voltage

Gate-source voltage

Drain current

Drain power dissipation

Channel temperature

Storage temperature range

Note: Using continuously under heavy loads (e.g. the application of

This relationship can be expressed as: V

be the voltage applied between gate and source that causes the drain current (I

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate, etc).

Mounted on an FR4 board

(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135 mm

Characteristics

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

Pulse

= 3.60 Ω (max) (@V

= 2.70 Ω (max) (@V

= 1.60 Ω (max) (@V

= 1.31 Ω (max) (@V

SSM6P36FE

Symbol

GSS

DSS

(Note1)

stg

GS(off)

Equivalent Circuit

< V

GS(on)

= -1.5 V)

= -1.8 V)

= -2.8 V)

= -4.5 V)

−55 to 150

Rating

< V

-330

-660

150

-20

±8

GS(on).

must be higher than V

× 6)

Unit

°C

(top view)

th,

Weight: 3.0 mg (typ.)

JEDEC

JEITA

TOSHIBA

and V

ES6

) to below (−1 mA for the

GS(off)

1.Source1

2.Gate1

3.Drain2

must be lower than

1.2±0.05

SSM6P36FE

1.6±0.05

www.DataSheet4U.com

2-2N1D

2008-06-05

―

4.Source2

5.Gate2

6.Drain1

Unit: mm

Related parts for SSM6P36FE

SSM6P36FE Summary of contents

Page 1

... Usage Considerations Let V be the voltage applied between gate and source that causes the drain current (I th SSM6P36FE). Then, for normal switching operation This relationship can be expressed as: V th. Take this into consideration when using the device. ...

Page 2

... -2 50Ω off =330mA DSF OUT OUT V 2 SSM6P36FE www.DataSheet4U.com Min Typ. Max ⎯ ⎯ -20 ⎯ ⎯ -12 ⎯ ⎯ -10 ⎯ ⎯ ±1 ⎯ -0.3 -1.0 ⎯ ⎯ (Note2) 190 ⎯ (Note2) 0.95 1.31 ⎯ ...

Page 3

... Gate-source voltage V 5 Common Source Ta = 25° -1 -4.5 V − 25 ° -100 Drain current I -1.0 -0.5 0 −50 150 Ambient temperature Ta (°C) 3 SSM6P36FE www.DataSheet4U.com I – − 25 °C -1.0 -2.0 ( – (ON) D -200 -300 -400 -500 -600 -700 (mA – Ta ...

Page 4

... Mounted on FR4 board. (25.4mm × 25.4mm × 1.6mm , Cu Pad : 0.135 mm 200 150 100 150 0 3 -40 -20 *:Total Rating Ambient temperature Ta (°C) 4 SSM6P36FE www.DataSheet4U.com I – =100 °C 25 °C −25 °C 0.4 0.6 0.8 1.0 1.2 ( – Common Source - ...

Page 5

... Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 5 SSM6P36FE www.DataSheet4U.com 2008-06-05 ...

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