SSM6P36FE Toshiba Semiconductor, SSM6P36FE Datasheet - Page 4
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SSM6P36FE
Manufacturer Part Number
SSM6P36FE
Description
Power Management Switches
Manufacturer
Toshiba Semiconductor
Datasheet
1.SSM6P36FE.pdf
(5 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
1000
300
100
100
30
10
50
30
10
5
3
1
-0.1
-8
-6
-4
-2
-1
0
0
Common Source
V DS = -3 V
Ta = 25°C
Common Source
Ta = 25°C
f = 1 MHz
V GS = 0 V
Common Source
I D = -0.33 A
Ta = 25°C
Drain-source voltage V
V DD =-10V
Total Gate Charge Qg (nC)
Dynamic Input Characteristic
Drain current I
-10
-1
1
|Y
C – V
fs
| – I
V DD = - 16 V
DS
D
D
-10
-100
(mA)
DS
2
C oss
C rss
(V)
C iss
-1000
-100
3
4
*:Total Rating
10000
1000
1000
100
100
0.1
10
10
250
200
150
100
150
1
0
0
-40
-1
t on
G
t f
t r
Common Source
V GS = 0 V
t off
Mounted on FR4 board.
(25.4mm × 25.4mm × 1.6mm , Cu Pad : 0.135 mm
-20
0.2
Drain-source voltage V
S
Ambient temperature Ta (°C)
D
Ta =100 °C
0
I
DR
Drain current I
20
0.4
-10
I
DR
P
40
t – I
D
* – Ta
– V
0.6
60
D
DS
−25 °C
80
D
-100
0.8
DS
Common Source
V DD = -10 V
V GS = 0 to -2.5 V
Ta = 25 °C
R G = 50Ω
25 °C
100
SSM6P36FE
(mA)
www.DataSheet4U.com
120
(V)
1.0
2008-06-05
2
140
× 6)
-1000
1.2
160