BSO303 Infineon Technologies AG, BSO303 Datasheet - Page 6

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BSO303

Manufacturer Part Number
BSO303
Description
OptiMOS -P Small-Signal-Transistor
Manufacturer
Infineon Technologies AG
Datasheet

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9 Drain-source on-resistance
R
parameter: I
11 Typ. capacitances
C = f (V
parameter: V
DS(on)
m
pF
22.5
17.5
12.5
10
10
10
30
25
20
15
10
-60
4
3
2
0
DS
= f(T j )
)
D
-20
5
GS
= -8.2 A, V
=0, f=1 MHz
10
20
98%
typ.
15
GS
60
= -10 V
20
100
C
C
C
V
iss
oss
rss
°C
- V
T
Preliminary data
j
DS
160
30
Page 6
12 Forward character. of reverse diode
I
parameter: T j , t
10 Typ. gate threshold voltage
V
parameter: V
F
GS(th)
= f (V
-10
-10
-10
-10
2.5
V
1.5
0.5
A
-1
1
0
-60
2
1
0
0
BSO303P
= f (T j )
SD
)
-0.4
-20
GS
-0.8
p
= V
= 80 µs
20
-1.2
DS
T
T
T
T
j
j
j
j
= 25 °C typ
= 150 °C typ
= 25 °C (98%)
= 150 °C (98%)
-1.6
60
-2
100
2002-01-08
BSO303P
-2.4
°C
V
V
98%
typ.
2%
T
SD
j
160
-3

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