BSO615 Infineon Technologies AG, BSO615 Datasheet - Page 11

• Manufacturer Part Number: BSO615
• Description: SIPMOS Small-Signal-Transistor
• Manufacturer: Infineon Technologies AG

Avalanche Energy E
parameter: I
R
Typ. gate charge (N-Ch.)
V
parameter: I
GS
GS
mJ
V
= f ( Q
50
40
35
30
25
20
15
10
16
12
10
= 25
5
0
8
6
4
2
0
25
0
BSO 615 C
2
45
Gate
D
D
4
0,2
= 3.1 A , V
= 3.1 A
)
65
V
6
DS max
8
85
AS
10
= f ( T
105
DD
12
= 25 V
14
j
125
) (N-Ch.)
0,8
16
V
Preliminary data
°C
DS max
nC
Q
T
j
Gate
165
20
Page 11
Avalanche Energy E
parameter: I
R
Typ. gate charge (P-Ch.)
V
parameter: I
GS
GS
mJ
-16
-12
-10
V
80
60
50
40
30
20
10
= f ( Q
= 25
-8
-6
-4
-2
0
0
25
0
BSO 615 C
2
45
Gate
D
D
4
= -2 A , V
= -2 A
0,2
)
65
V
6
DS max
8
85
AS
10
DD
= f ( T
105
12
= -25 V
BSO 615 C
j
14
125
)
0,8
1999-10-28
16 nC
V
°C
DS max
Q
T
Gate
j
165
20