FDD6676 Fairchild Semiconductor, FDD6676 Datasheet - Page 2

• Manufacturer Part Number: FDD6676
• Description: 30V N-Channel PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Drain-Source Avalanche Ratings
W
I
Electrical Characteristics
Symbol
Off Characteristics
BV
I
I
I
On Characteristics
V
R
I
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
AR
DSS
GSSF
GSSR
D(on)
d(on)
r
d(off)
f
FS
BV
V
GS(th)
DS(on)
iss
oss
rss
g
gs
gd
DSS
GS(th)
DSS
T
T
DSS
J
J
Drain-Source Avalanche Energy
Drain-Source Avalanche Current
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Parameter
(Note 2)
(Note 2)
(Note 2)
Single Pulse, V
V
I
V
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
D
D
T
GS
DS
GS
GS
DS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
= 250 A,Referenced to 25 C
= 250 A,Referenced to 25 C
A
= 25°C unless otherwise noted
= 0 V, I
= 24 V,
= 16 V,
= –16 V
= V
= 10 V, I
= 4.5 V, I
= 10 V, I
= 10 V,
= 5 V,
= 15 V,
= 15 V,
= 10 V,
= 15V,
= 5 V
Test Conditions
GS
, I
D
D
= 250 A
= 250 A
D
D
D
= 16.8 A
= 15.8 A
= 16.8 A,T
DD
V
V
V
I
V
D
V
I
GS
DS
DS
I
R
D
DS
= 15 V, I
D
= 16.8 A
GS
GEN
= 16.8 A,
= 0 V
= 5 V
= 0 V
= 1 A,
= 0 V
= 0 V,
= 6
J
=125 C
D
=21A
Min Typ Max Units
30
50
1
5103
836
361
1.5
4.8
5.4
7.3
24
80
15
87
40
45
13
12
-5
9
–100
10.5
100
139
370
7.5
8.5
63
27
18
64
21
1
3
FDD6676 Rev. C(W)
mV/ C
mV/ C
m
mJ
nA
nA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
V
A
S
A
A