FDD6676 Fairchild Semiconductor, FDD6676 Datasheet - Page 3

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FDD6676

Manufacturer Part Number
FDD6676
Description
30V N-Channel PowerTrench MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet

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Notes:
1. R
2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
3. Maximum current is calculated as:
the drain pins. R
Scale 1 : 1 on letter size paper
Electrical Characteristics
Symbol
Drain–Source Diode Characteristics and Maximum Ratings
I
V
S
where P
SD
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
D
is maximum power dissipation at T
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
JC
is guaranteed by design while R
Parameter
C
R
a) R
P
= 25°C and R
DS(ON)
D
1in
JA
2
CA
pad of 2 oz copper
(continued)
= 40°C/W when mounted on a
is determined by the user's board design.
DS(on)
V
is at T
GS
= 0 V,
J(max)
Test Conditions
and V
T
A
I
GS
S
= 25°C unless otherwise noted
= 3.2 A
= 10V. Package current limitation is 21A
(Note 2)
Min Typ Max Units
b) R
on a minimum pad.
JA
= 96°C/W when mounted
0.7
3.2
1.2
FDD6676 Rev. C(W)
A
V

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