PHN603S Philips Semiconductors, PHN603S Datasheet - Page 3

• Manufacturer Part Number: PHN603S
• Description: TrenchMOS/ Schottky diode array Three phase brushless d.c. motor driver
• Manufacturer: Philips Semiconductors

Philips Semiconductors
October 1998
TrenchMOS/ Schottky diode array
Three phase brushless d.c. motor driver
ID% = 100 I
120
100
120
100
0.01
100
80
60
40
20
80
60
40
20
0.1
10
I
0
0
Fig.2. Normalised continuous drain current.
1
D
0.1
0
0
& I
Normalised Power Dissipation, PD (%)
Normalised Drain Current, ID (%)
Peak Pulsed Drain Current, IDM (A)
Fig.3. Safe operating area. T
Fig.1. Normalised power dissipation.
RDS(on) = VDS/ ID
DM
= f(V
25
25
PD% = 100 P
D
/I
D 25 ˚C
DS
Drain-Source Voltage, VDS (V)
Ambient Temperature, Ta (C)
Ambient Temperature, Ta (C)
); I
50
50
1
= f(T
DM
single pulse; parameter t
d.c.
a
D
); conditions: V
75
75
/P
D 25 ˚C
100
100
= f(T
10
a
= 25 ˚C
a
)
tp = 100 us
125
125
100 ms
1 ms
10 ms
GS
PHN603S
4.5 V
150
150
100
p
3
Fig.5. Transient thermal impedance; Schottky Diode.
0.01
0.01
junctions
100
Fig.4. Transient thermal impedance; MOSFET.
100
MOSFET
0.1
0.1
10
10
Rth j-b
1
1E-06
1
1E-06
Transient Thermal Impedance, Zth j-a (K/W)
Transient Thermal Impedance, Zth j-a (K/W)
D = 0.5
Fig.6. Thermal model; typical values.
0.1
0.02
0.2
0.05
1E-05
1E-05
Z
Single pulse
th j-a
SCHOTTKY
1E-04
1E-04
Single pulse
= f(t); parameter D = t
ambient
Rth b-a
R
board
th j-b
pulse width, tp (s)
pulse width, tp (s)
Z
1E-03
1E-03
th j-a
6 PAIRS
and R
= f(t)
1E-02
1E-02
MOSFET
th b-a
P
P
Product specification
D
D
1E-01
1E-01
tp
tp
T
p
/T
SCHOTTKY
1E+00 1E+01
1E+00 1E+01
PHN603S
D = tp/T
SCHOTTKY
MOSFET
Rev 1.000
t
t