PHN603S Philips Semiconductors, PHN603S Datasheet - Page 5

• Manufacturer Part Number: PHN603S
• Description: TrenchMOS/ Schottky diode array Three phase brushless d.c. motor driver
• Manufacturer: Philips Semiconductors

Philips Semiconductors
October 1998
TrenchMOS/ Schottky diode array
Three phase brushless d.c. motor driver
100mA
10000
100uA
10mA
1000
10uA
1mA
100
Fig.14. Typical capacitances, C
1uA
C = f(V
0.1
0
Drain current, ID (A)
Fig.13. Sub-threshold drain current.
Capacitances, Ciss, Coss, Crss (pF)
I
D
DS
= f(V
); conditions: V
min
1
GS)
Drain-Source Voltage, VDS (V)
Gate-source voltage, VGS (V)
; conditions: T
1
2
typ
GS
= 0 V; f = 1 MHz
Sub-Threshold Conduction
3
j
10
= 25 ˚C
iss
, C
oss
4
VDS = VGS
PHN603S
Crss
Coss
Ciss
Tj = 25 C
, C
rss
100
.
5
5
Fig.15. Typical turn-on gate-charge characteristics.
15
14
13
12
11
10
4.5
3.5
2.5
1.5
0.5
9
8
7
6
5
4
3
2
1
0
I
5
4
3
2
1
0
F
0
0
Gate-source voltage, VGS (V)
= f(V
Source-Drain Diode Current, IF (A)
ID = 1A
Tj = 25 C
VDD = 20 V
VGS = 0 V
Fig.16. Typical reverse diode current.
0.1
SDS
); conditions: V
5
0.2
Drain-Source Voltage, VSDS (V)
Gate charge, QG (nC)
V
0.3
10
GS
150 C
= f(Q
0.4
GS
G
= 0 V; parameter T
15
)
0.5
Product specification
Tj = 25 C
0.6
20
PHN603S
PHN603S
PHN603S
0.7
Rev 1.000
0.8
25
j