BUK436-800B Philips Semiconductors, BUK436-800B Datasheet - Page 4

• Manufacturer Part Number: BUK436-800B
• Description: PowerMOS transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
February 1998
PowerMOS transistor
Fig.9. Normalised drain-source on-state resistance.
a = R
I
D
Fig.8. Typical transconductance, T
= f(V
8
6
4
2
0
7
6
5
4
3
2
1
0
2
1
0
-60 -40
0
Fig.7. Typical transfer characteristics.
DS(ON)
0
ID / A
gfs / S
a
GS
g
) ; conditions: V
fs
/R
= f(I
Tj / C =
-20
DS(ON)25 ˚C
2
2
D
); conditions: V
0
20
4
= f(T
25
VGS / V
Tj / C
ID / A
40
4
DS
j
); I
Normalised RDS(ON) = f(Tj)
60
= 25 V; parameter T
D
6
= 1.5 A; V
DS
80
150
= 25 V
100 120 140
6
BUK4y6-800A
BUK4y6-800A
8
j
= 25 ˚C .
GS
= 10 V
10
8
j
4
V
Fig.12. Typical capacitances, C
10000
I
C = f(V
GS(TO)
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
1000
4
3
2
1
0
D
100
-60
10
= f(V
VGS(TO) / V
Fig.11. Sub-threshold drain current.
0
C / pF
0
Fig.10. Gate threshold voltage.
ID / A
= f(T
-40
GS)
DS
); conditions: V
-20
; conditions: T
j
); conditions: I
1
0
20
2 %
20
max.
typ.
min.
Tj / C
40
VDS / V
SUB-THRESHOLD CONDUCTION
VGS / V
2
BUK436W-800A/B
j
GS
60
D
= 25 ˚C; V
= 1 mA; V
= 0 V; f = 1 MHz
typ
80
Product specification
3
100 120 140
iss
, C
BUK4y6-800
98 %
40
DS
DS
oss
= V
4
Ciss
Coss
Crss
, C
= V
Rev 1.000
GS
rss
GS
.