BUK436-800B Philips Semiconductors, BUK436-800B Datasheet - Page 5

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BUK436-800B

Manufacturer Part Number
BUK436-800B
Description
PowerMOS transistor
Manufacturer
Philips Semiconductors
Datasheet
Philips Semiconductors
February 1998
PowerMOS transistor
Fig.13. Typical turn-on gate-charge characteristics.
V
GS
12
10
8
6
4
2
0
= f(Q
0
VGS / V
G
); conditions: I
20
QG / nC
D
= 4 A; parameter V
VDS / V =160
BUK4y6-800
40
640
DS
5
I
F
10
= f(V
5
0
Fig.14. Typical reverse diode current.
0
IF / A
SDS
Tj / C = 150
); conditions: V
VSDS / V
BUK436W-800A/B
1
GS
25
= 0 V; parameter T
Product specification
BUK4y6-800A
Rev 1.000
2
j

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