BUK446-1000B Philips Semiconductors, BUK446-1000B Datasheet - Page 3

• Manufacturer Part Number: BUK446-1000B
• Description: PowerMOS transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
May 1995
PowerMOS transistor
ID% = 100 I
I
Fig.2. Normalised continuous drain current.
D
0.01
120
110
100
120
110
100
0.1
90
80
70
60
50
40
30
20
10
10
& I
90
80
70
60
50
40
30
20
10
0
Fig.3. Safe operating area. T
1
0
Fig.1. Normalised power dissipation.
10
0
DM
0
PD%
ID%
ID / A
= f(V
PD% = 100 P
20
D
20
/I
D 25 ˚C
DS
DC
); I
40
40
= f(T
DM
100
single pulse; parameter t
60
60
hs
D
Ths / C
Ths / C
VDS / V
/P
with heatsink compound
); conditions: V
Normalised Current Derating
80
D 25 ˚C
80
Normalised Power Derating
with heatsink compound
1000
100
100
= f(T
100 ms
100 us
1 ms
10 ms
tp = 10 us
hs
BUK446-1000B
hs
120
= 25 ˚C
120
)
GS
140
140
10 V
p
3
Fig.5. Typical output characteristics, T
0.001
Fig.6. Typical on-state resistance, T
0.01
0.1
6
5
4
3
2
1
0
15
10
10
5
0
1
1E-07
0
ID / A
Fig.4. Transient thermal impedance.
0
RDS(ON) / Ohm
Zth / (K/W)
D =
0.05
0.02
0.5
0.2
0.1
Z
0
R
4
4.2 4.4
th j-hs
I
DS(ON)
D
= f(V
1E-05
= f(t); parameter D = t
8
1
= f(I
DS
4.6
12
); parameter V
D
); parameter V
VDS / V
ID / A
1E-03
t / s
2
VGS / V =
16
4.8
P
D
VGS / V =
BUK446-1000B
Product Specification
20
t
p
T
1E-01
BUK456-1000A
BUK456-1000A
3
GS
5
D =
24
GS
p
/T
BUKx46-hv
10
4
j
6
T
j
t
= 25 ˚C .
p
t
= 25 ˚C .
28
Rev 1.200
10
1E+01
4.8
4.6
4.4
4.2
5
4