BUK446-1000B Philips Semiconductors, BUK446-1000B Datasheet - Page 5

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BUK446-1000B

Manufacturer Part Number
BUK446-1000B
Description
PowerMOS transistor
Manufacturer
Philips Semiconductors
Datasheet
Philips Semiconductors
May 1995
PowerMOS transistor
Fig.13. Typical turn-on gate-charge characteristics.
V
GS
12
10
8
6
4
2
0
= f(Q
0
VGS / V
G
); conditions: I
10
QG / nC
D
20
= 3.5 A; parameter V
VDS / V =200
30
BUK456-1000
800
40
DS
5
I
F
10
= f(V
8
6
4
2
0
Fig.14. Typical reverse diode current.
0
IF / A
SDS
); conditions: V
150 C
VSDS / V
1
GS
25 C
= 0 V; parameter T
BUK446-1000B
Product Specification
BUK456-1000A
Rev 1.200
2
j

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