BUK454-60H Philips Semiconductors, BUK454-60H Datasheet - Page 3

• Manufacturer Part Number: BUK454-60H
• Description: PowerMOS transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
August 1996
PowerMOS transistor
ID% = 100 I
1000
100
I
Fig.2. Normalised continuous drain current.
D
10
120
110
100
120
110
100
1
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
& I
Fig.3. Safe operating area. T
0
1
0
ID / A
Fig.1. Normalised power dissipation.
0
0
DM
PD%
ID%
= f(V
PD% = 100 P
20
20
D
/I
D 25 ˚C
DS
); I
40
40
10
= f(T
DC
DM
single pulse; parameter t
60
60
BUK454-60H
mb
D
Tmb / C
VDS / V
Tmb / C
/P
); conditions: V
Normalised Current Derating
D 25 ˚C
80
80
Normalised Power Derating
100
= f(T
100
tp = 100 us
1 ms
10 ms
100 ms
100
mb
mb
120
120
= 25 ˚C
)
GS
140
140
10 V
p
3
0.001
Fig.5. Typical output characteristics, T
0.01
Fig.6. Typical on-state resistance, T
0.1
0.15
0.05
80
70
60
50
40
30
20
10
10
0.2
0.1
0
1
0
0
ID / A
Zth j-mb / (K/W)
0
RDS(ON) / Ohm
D =
0.05
0.02
Fig.4. Transient thermal impedance.
0.5
0.2
0.1
0
5
Z
20
10
R
th j-mb
I
DS(ON)
2
D
1E-05
15
= f(V
20
6
= f(t); parameter D = t
= f(I
10
DS
30
4
); parameter V
VDS / V
BUK454-60H
D
); parameter V
7
1E-03
ID / A
t / s
40
P
D
6
50
Product specification
8
t
p
BUK454-60H
T
1E-01
GS
60
VGS / V = 9
GS
p
VGS / V =
D =
8
BUK474-60H
BUK474-60H
/T
j
j
= 25 ˚C .
9
= 25 ˚C .
t
T
70
p
t
Rev 1.000
10
20
6
1E+01
7
5
8
10
80