BUK454-60H Philips Semiconductors, BUK454-60H Datasheet - Page 4

• Manufacturer Part Number: BUK454-60H
• Description: PowerMOS transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
August 1996
PowerMOS transistor
Fig.9. Normalised drain-source on-state resistance.
a = R
I
D
80
70
60
50
40
30
20
10
Fig.8. Typical transconductance, T
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
20
15
10
0
= f(V
5
0
0
0
ID / A
0
-60
gfs / S
Fig.7. Typical transfer characteristics.
DS(ON)
a
Tj / C =
GS
g
10
) ; conditions: V
fs
/R
2
-20
= f(I
DS(ON)25 ˚C
-40
150
20
25
D
); conditions: V
4
20
30
= f(T
VGS / V
ID / A
Tj / C
40
6
60
DS
j
); I
Normalised RDS(ON) = f(Tj)
= 15 V; parameter T
D
50
= 20 A; V
100
DS
8
Tj / C =
= 15 V
60
BUK474-60H
BUK474-60H
140
j
10
= 25 ˚C .
GS
70
150
-40
25
= 10 V
180
80
12
j
4
V
10000
Fig.12. Typical capacitances, C
1000
C = f(V
GS(TO)
I
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
100
4
3
2
1
0
D
-60
0.01
= f(V
VGS(TO) / V
Fig.11. Sub-threshold drain current.
C / pF
0
Fig.10. Gate threshold voltage.
ID / A
= f(T
-40
GS)
DS
); conditions: V
-20
; conditions: T
j
); conditions: I
0.1
1
0
20
2 %
max.
typ.
min.
Tj / C
40
VDS / V
SUB-THRESHOLD CONDUCTION
2
VGS / V
1
j
GS
= 25 ˚C; V
60
D
= 1 mA; V
= 0 V; f = 1 MHz
typ
80
Product specification
3
BUK454-60H
100 120 140
iss
10
, C
98 %
BUK474-60H
DS
DS
oss
= V
Ciss
Coss
4
Crss
, C
= V
Rev 1.000
GS
rss
100
GS
.