BUK9506-30 Philips Semiconductors, BUK9506-30 Datasheet

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BUK9506-30

Manufacturer Part Number
BUK9506-30
Description
TrenchMOS transistor Logic level FET
Manufacturer
Philips Semiconductors
Datasheet

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Part Number:
BUK9506-30
Manufacturer:
PHILIPS
Quantity:
5 000
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BUK9506-30
Manufacturer:
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Quantity:
12 500
Philips Semiconductors
GENERAL DESCRIPTION
N-channel enhancement mode logic
level field-effect power transistor in a
plastic
technology. The device features very
low on-state resistance and has
integral zener diodes giving ESD
protection up to 2kV. It is intended for
use in automotive and general
purpose switching applications.
PINNING - TO220AB
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCES
ESD LIMITING VALUE
December 1997
TrenchMOS
Logic level FET
SYMBOL
V
V
I
I
I
P
T
SYMBOL
R
R
SYMBOL
V
D
D
DM
PIN
V
stg
DS
DGR
tot
C
tab
th j-mb
th j-a
1
2
3
GS
, T
j
envelope
gate
drain
source
drain
DESCRIPTION
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
PARAMETER
Electrostatic discharge capacitor
voltage, all pins
using
transistor
’trench’
QUICK REFERENCE DATA
PIN CONFIGURATION
SYMBOL
V
I
P
T
R
D
j
DS
tot
DS(ON)
CONDITIONS
-
R
-
T
T
T
T
-
CONDITIONS
-
in free air
CONDITIONS
Human body model
(100 pF, 1.5 k )
mb
mb
mb
mb
GS
tab
PARAMETER
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
= 25 ˚C
= 100 ˚C
= 25 ˚C
= 25 ˚C
= 20 k
1 2 3
1
V
GS
= 5 V
SYMBOL
TYP.
MIN.
MIN.
- 55
60
-
-
-
-
-
-
-
-
-
g
MAX.
Product specification
187
175
30
75
6
MAX.
MAX.
MAX.
240
187
175
0.8
30
30
10
75
53
2
BUK9506-30
-
d
s
Rev 1.100
UNIT
UNIT
UNIT
K/W
K/W
UNIT
kV
W
˚C
m
V
V
V
A
A
A
W
˚C
V
A

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BUK9506-30 Summary of contents

Page 1

... CONDITIONS - ˚ 100 ˚ ˚ ˚ CONDITIONS - in free air CONDITIONS Human body model (100 pF, 1 Product specification BUK9506-30 MAX 187 175 SYMBOL MIN. MAX. UNIT - 240 - 187 ...

Page 2

... Resistive load Measured from contact screw on tab to centre of die Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad 2 Product specification BUK9506-30 MIN. TYP. MAX. UNIT 1.0 1.5 2.0 V ...

Page 3

... -dI /dt = 100 - CONDITIONS ˚ Product specification BUK9506-30 MIN. TYP. MAX. UNIT - - 240 A - 0. 100 - MIN. TYP. MAX. UNIT ...

Page 4

... Fig.6. Typical on-state resistance Product specification BUK9506-30 Zth / (K/W) 0.5 0.2 0 1E-07 1E-05 1E-03 1E- Fig.4. Transient thermal impedance f(t); parameter j-mb p BUK9506-30 3.5 5 VGS / VDS / f(V ); parameter f(I ); parameter V DS(ON ...

Page 5

... V DS 30V TrenchMOS 10000 1000 100 100 200 150 Fig.12. Typical capacitances Product specification BUK9506-30 VGS(TO max. typ. min. - 100 Fig.10. Gate threshold voltage. = f(T ); conditions mA; V GS(TO Sub-Threshold Conduction 2% typ 98 ...

Page 6

... Fig.15. Normalised avalanche energy rating DSS 9506-30 VGS 0 1.5 2 Fig.16. Avalanche energy test circuit VGS 0 6 Product specification BUK9506- 100 120 140 160 Tmb / f(T ); conditions VDS - T.U. RGS shunt 2 0 ...

Page 7

... Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for SOT78 (TO220) envelopes. 3. Epoxy meets UL94 V0 at 1/8". December 1997 10,3 max 3,7 2,8 3,0 13,5 min 1 max (2x) 0,9 max (3x) 2,54 2,54 Fig.18. SOT78 (TO220AB); pin 2 connected to mounting base. 7 Product specification BUK9506-30 4,5 max 1,3 5,9 min 0,6 2,4 Rev 1.100 15,8 max ...

Page 8

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. December 1997 8 Product specification BUK9506-30 Rev 1.100 ...

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