BUK9506-30 Philips Semiconductors, BUK9506-30 Datasheet - Page 5

• Manufacturer Part Number: BUK9506-30
• Description: TrenchMOS transistor Logic level FET
• Manufacturer: Philips Semiconductors

Philips Semiconductors
December 1997
TrenchMOS
Logic level FET
Fig.9. Normalised drain-source on-state resistance.
100
100
1.5
0.5
I
80
60
40
20
a = R
D
80
60
40
20
0
2
1
0
-100
Fig.8. Typical transconductance, T
0
= f(V
0
gfs / S
0
a
ID / A
Fig.7. Typical transfer characteristics.
DS(ON)
GS
g
-50
) ; conditions: V
fs
/R
20
= f(I
1
DS(ON)25 ˚C
D
Tj / C = 175
); conditions: V
Tj / C = 25
0
transistor
40
2
= f(T
VGS / V
ID / A
Tj / C
50
DS
j
); I
= 25 V; parameter T
60
D
25
3
175
= 25 A; V
100
DS
= 25 V
30V TrenchMOS
j
80
150
4
= 25 ˚C .
GS
9506-30
9506-30
= 5 V
200
100
5
j
5
1E-01
1E-02
1E-03
1E-04
1E-05
1E-05
10000
1000
100
2.5
1.5
0.5
V
Fig.12. Typical capacitances, C
2
1
0
-100
I
C = f(V
GS(TO)
0.1
D
0
VGS(TO) / V
C / pF
= f(V
Fig.11. Sub-threshold drain current.
max.
min.
typ.
Fig.10. Gate threshold voltage.
= f(T
GS)
DS
-50
0.5
); conditions: V
; conditions: T
j
); conditions: I
2%
0
1
1
Tj / C
typ
VDS / V
50
1.5
j
GS
D
= 25 ˚C; V
= 1 mA; V
Sub-Threshold Conduction
= 0 V; f = 1 MHz
98%
100
Product specification
10
2
BUK9506-30
iss
, C
BUK959-60
150
DS
DS
oss
9506-30
= V
2.5
, C
= V
Ciss
Coss
Crss
Rev 1.100
GS
rss
200
GS
.
100
3