BTS410D2 Siemens Semiconductor Group, BTS410D2 Datasheet - Page 6

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BTS410D2

Manufacturer Part Number
BTS410D2
Description
Smart Highside Power Switch (Overload protection Current limitation Short circuit protection Thermal shutdown)
Manufacturer
Siemens Semiconductor Group
Datasheet

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Truth Table
L = "Low" Level
H = "High" Level
Terms
Input circuit (ESD protection)
ZD
voltage clamp at DC conditions. Operation in this mode
may result in a drift of the zener voltage (increase of up
to 1 V).
14
15
16
Semiconductor Group
Normal
operation
Open load
Short circuit
to GND
Short circuit
to V
Overtem-
perature
Under-
voltage
Overvoltage
) Power Transistor off, high impedance, versions BTS 410H, BTS 412B: internal pull up current source for
) Low resistance short V
) No current sink capability during undervoltage shutdown
V
I1
bb
open load detection.
bb
6 V typ., ESD zener diodes are not to be used as
V
IN
IN
I IN
V ST
I ST
ZD
2
4
Input-
ESD-
level
R
I1
IN
ST
H
H
H
H
H
H
H
L
L
L
L
L
L
L
I
ZD
R
X = don't care
GND
I2
Status signal after the time delay shown in the diagrams (see fig 5. page 11...12)
PROFET
GND
GND
bb
3
1
V
Output
bb
level
to output may be detected in ON-state by the no-load-detection
I bb
14 )
I GND
H
H
H
H
L
L
L
L
L
L
L
L
L
I
I
OUT
5
I L
412
L
L
B2
H
H
H
H
H
L
L
L
L
L
16)
16)
L
L
Z = high impedance, potential depends on external circuit
V OUT
V ON
Status
H (L
L
L
410
D2
H
H
H
H
H
L
L
L
L
L
L
16)
16)
6
15)
Status output
Zener diode: 6 V typ., max 5.0 mA, V
ESD zener diodes are not to be used as voltage clamp
at DC conditions. Operation in this mode may result in
a drift of the zener voltage (increase of up to 1 V).
)
H (L
E2/F2
410
H
H
H
H
H
H
H
H
H
L
L
L
L
15)
)
H (L
410
G2
H
H
H
H
H
H
H
H
H
H
L
L
L
15)
GND
)
V
410
Logic
H2
H
H
H
H
H
H
H
H
H
L
L
L
L
L
ESD-
ZD
Logic
BTS 410 D2
ST
5 V typ,

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