BTS410D2 Siemens Semiconductor Group, BTS410D2 Datasheet - Page 8

• Manufacturer Part Number: BTS410D2
• Description: Smart Highside Power Switch (Overload protection Current limitation Short circuit protection Thermal shutdown)
• Manufacturer: Siemens Semiconductor Group

V
load
Normal load current can be handled by the PROFET
itself.
V
inductive load
If other external inductive loads L are connected to the PROFET,
additional elements like D are necessary.
Inductive Load switch-off energy
dissipation
Energy stored in load inductance:
While demagnetizing load inductance, the energy
dissipated in PROFET is
Semiconductor Group
V
=
bb
bb
bb
high
V
bb
disconnect with energized inductive
disconnect with charged external
E
high
bb
E
2
4
AS
IN
ST
= E
S
2
bb
4
IN
S T
PROFET
+ E
IN
ST
GND
3
1
V
bb
E
L
PROFET
L
- E
G N D
PROFET
=
V
GND
b b
3
1
1 /
V
R
OUT
bb
2
= V
·
L
·
I
5
O U T
2
L
ON(CL)
OUT
E A S
Z L
·
5
{
i
L
(t) dt,
R L
L
E
E
E Load
R
L
D
8
with an approximate solution for R
Maximum allowable load inductance for
a single switch off
L = f (I
L [mH]
Typ. transient thermal impedance chip case
Z
Z
V
thJC
thJC
bb
10000
0.01
E
= 12 V, R
1000
0.1
= f (t
[K/W]
AS
10
100
L
1
1E-5
10
); T
=
1
p
2
, D), D=t
I
1
L
·
j,start
·
R
L
L
L
1E-4
·
(
= 0
V
= 150°C, T
bb
2
p
/T
+ |V
1E-3
OUT(CL)
C
3
1E-2
= 150°C const.,
|)
·
ln
L
1E-1
4
(1+
0 :
BTS 410 D2
|V
1E0
OUT(CL)
D=
0.5
0.2
0.1
0.05
0.02
0.01
0
I
L
5
·
R
L
1E1
I L [A]
|
t p [s]
)
6