BTS611L1E3128A Siemens Semiconductor Group, BTS611L1E3128A Datasheet

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BTS611L1E3128A

Manufacturer Part Number
BTS611L1E3128A
Description
Smart Two Channel Highside Power Switch
Manufacturer
Siemens Semiconductor Group
Datasheet

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Smart Two Channel Highside Power Switch
Features
Application
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS
functions.
1
Semiconductor Group
)
auto-restart and hysteresis
feedback for 12 V and 24 V DC grounded loads
loads
Overload protection
Current limitation
Short circuit protection
Thermal shutdown
Overvoltage protection (including load dump)
Fast demagnetization of inductive loads
Reverse battery protection
Undervoltage and overvoltage shutdown with
Open drain diagnostic output
Open load detection in ON-state
CMOS compatible input
Loss of ground and loss of V
Electrostatic discharge (ESD) protection
All types of resistive, inductive and capacitve
Replaces electromechanical relays, fuses and discrete circuits
C compatible power switch with diagnostic
With external current limit (e.g. resistor R
connection, reverse load current limited by connected load.
5
3
6
IN1
IN2
ST
PROFET
ESD
Voltage
Voltage
source
sensor
Logic
V
1 )
Logic
bb
protection
Overvoltage
protection
Charge
Charge
Level shifter
pump 1
pump 2
Level shifter
Rectifier 2
Rectifier 1
2
GND
Signal GND
GND
=150 ) in GND connection, resistor in series with ST
Current
Current
limit 1
limit 2
Product Summary
Overvoltage protection
Operating voltage
On-state resistance R
Load current (ISO)
Current limitation
1
Short to Vbb
Short to Vbb
Open load
unclamped
Open load
unclamped
detection 2
detection 1
ind. loads 1
ind. loads 2
technology. Fully protected by embedded protection
Limit for
Limit for
Standard
protection
protection
Gate 2
Gate 1
Temperature
Temperature
1
sensor 1
sensor 2
7
channels:
TO-220AB/7
Straight leads
I
I
PROFET ® BTS 611 L1
L(ISO)
L(SCr)
R
ON
O1
GND
V
V
OUT2
+ V bb
OUT1
bb(AZ)
bb(on)
R
1
O2
each
200
2.3
1
7
4
7
4
Load GND
5.0 ... 34 V
Load
both
parallel
SMD
100 m
4.4
43
1
4
12.96
7
V
A
A

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BTS611L1E3128A Summary of contents

Page 1

Smart Two Channel Highside Power Switch Features Overload protection Current limitation Short circuit protection Thermal shutdown Overvoltage protection (including load dump) Fast demagnetization of inductive loads 1 ) Reverse battery protection Undervoltage and overvoltage shutdown with auto-restart and hysteresis Open ...

Page 2

Pin Symbol 1 OUT1 (Load GND 3 IN1 IN2 7 OUT2 (Load, L) Maximum Ratings °C unless otherwise specified j Parameter Supply voltage (overvoltage protection see page 4) ...

Page 3

Thermal Characteristics Parameter and Conditions Thermal resistance chip - case, both channels: junction - ambient (free air): SMD version, device on PCB Electrical Characteristics Parameter and Conditions ° unless otherwise specified j ...

Page 4

Parameter and Conditions ° unless otherwise specified j bb Operating Parameters ) 6 Operating voltage Undervoltage shutdown Undervoltage restart Undervoltage restart of charge pump see diagram page 13 Undervoltage hysteresis V = ...

Page 5

Parameter and Conditions ° unless otherwise specified j bb Protection Functions Initial peak short circuit current limit (pin Repetitive short circuit shutdown current limit ...

Page 6

Parameter and Conditions ° unless otherwise specified j bb Input and Status Feedback Input resistance T =-40..150°C, see circuit page 7 j Input turn-on threshold voltage Input turn-off threshold voltage Input threshold ...

Page 7

Truth Table Normal operation Open load Short circuit Overtemperature Undervoltage/ Overvoltage L = "Low" Level X = don't care H = "High" Level Status signal after the time delay shown in the diagrams (see fig 5. page ...

Page 8

Status output R ST(ON) GND ESD-Zener diode: 6.1 V typ., max 5 mA; R < 380 at 1.6 mA, ESD zener diodes are not ST(ON used as voltage clamp at DC conditions. Operation in this mode may result ...

Page 9

GND disconnect with GND pull IN1 V IN1 PROFET IN2 6 V OUT2 IN2 ST GND GND Any kind of load device stays ...

Page 10

Typ. transient thermal impedance chip case one Channel active thJC p Z [K/W] thJC 10 1 0.1 0.01 1E-5 1E-4 1E-3 1E-2 Typ. transient thermal impedance chip case = both Channel ...

Page 11

Timing diagrams Figure 1a: V turn on: bb IN1 IN2 OUT1 V OUT2 ST open drain Figure 2a: Switching a lamp OUT I L Semiconductor Group Both channels are symmetric and consequently the diagrams ...

Page 12

Figure 4a: Overtemperature: Reset if T < OUT T J Figure 5a: Open load: detection in ON-state, open load occurs in on-state IN1 IN2 channel 2: normal operation V OUT1 channel ...

Page 13

Figure 6a: Undervoltage bb(under) V OUT ST open drain Figure 6b: Undervoltage restart of charge pump bb(o rst) bb(u rst) V bb(u cp) V bb(under) charge pump starts at V =5.6 ...

Page 14

Package and Ordering Code All dimensions in mm Standard TO-220AB/7 BTS611L1 TO 220AB/7, Opt. E3230 BTS611L1 E3230 Semiconductor Group SMD TO 220AB/7, Opt. E3128 BTS611L1 E3128A T&R: Ordering code Q67060-S6302-A2 Changed since 04.96 Date Dec 1996 Ordering code Q67060-S6302-A3 Components ...

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