BTS611L1E3128A Siemens Semiconductor Group, BTS611L1E3128A Datasheet - Page 9

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BTS611L1E3128A

Manufacturer Part Number
BTS611L1E3128A
Description
Smart Two Channel Highside Power Switch
Manufacturer
Siemens Semiconductor Group
Datasheet

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GND disconnect with GND pull up
Any kind of load. If V
Due to V
V
load
Normal load current can be handled by the PROFET
itself.
V
inductive load
If other external inductive loads L are connected to the PROFET,
additional elements like D are necessary.
Semiconductor Group
bb
bb
V
bb
V
V
high
disconnect with energized inductive
disconnect with charged external
bb
bb
GND
high
>0, no V
V
IN1
3
6
5
V
IN2
ST
IN1
IN2
V
3
GND >
3
6
5
6
5
ST
ST
IN2
ST
IN2
ST
IN1
IN1
PROFET
= low signal available.
GND
4
V
2
V
IN
bb
PROFET
PROFET
- V
GND
GND
4
4
2
2
V
V
IN(T+)
bb
bb
OUT2
OUT1
V
GND
device stays off
OUT2
OUT2
OUT1
OUT1
1
7
1
1
7
7
D
9
Inductive Load switch-off energy
dissipation
Energy stored in load inductance:
While demagnetizing load inductance, the energy
dissipated in PROFET is
with an approximate solution for R
Maximum allowable load inductance for
a single switch off
L = f (I
L [mH]
V
=
bb
1000
100
E
= 12 V, R
10
AS
1
L
E
2
); T
=
bb
E
2
I
AS
L
·
j,start
·
R
= E
L
L
L
·
(
= 0
3
V
bb
= 150°C, T
IN
S T
bb
+ E
+ |V
E
L
PROFET
L
4
OUT(CL)
- E
G N D
(both channels parallel)
=
V
bb
1 /
C
R
2
= V
= 150°C const.,
·
L
5
|)
·
I
·
O U T
2
L
ON(CL)
ln
L
(1+
E A S
Z L
0 :
6
BTS 611 L1
·
{
i
|V
L
(t) dt,
R L
OUT(CL)
L
I
L
·
R
7
L
E
I L [A]
E
|
E Load
R
)
L
8

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