BTS6510 Infineon Technologies AG, BTS6510 Datasheet - Page 7

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BTS6510

Manufacturer Part Number
BTS6510
Description
Smart Highside High Current Power Switch
Manufacturer
Infineon Technologies AG
Datasheet

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Terms
V
Two or more devices can easily be connected in
parallel to increase load current capability.
Input circuit (ESD protection)
When the device is switched off (I
between IN and GND reaches almost V
mechanical switch, a bipolar or MOS transistor with
appropriate breakdown voltage as driver.
V
bb
Z,IN
V bIN
= 66 V (typ).
V
IN
V IN
V
V
bIN
IN
Z,IN
R
I
I
IN
IN
IN
V
V
ZD
3
IS
bIS
IN
4
5
PROFET
V
IS
bb
I bb
D
R
I
IS
S
IS
IN
= 0) the voltage
OUT
bb
R bb
. Use a
1,2,6,7
I L
Page 7 of 15
V bb
V
V
OUT
ON
Current sense status output
V
devices are connected in parallel). I
driven only by the internal circuit as long as V
5 V. If you want measure load currents up to I
should be less than
Note: For large values of R
almost V
If you don't use the current sense output in your
application, you can leave it open.
Inductive and overvoltage output clamp
V
switch-off without D
-19 V typ. via V
V
the inductive load, but higher peak power dissipation in
the PROFET. In case of a floating ground with a
potential higher than 19V referring to the OUT –
potential the device will switch on, if diode DS is not
used.
Z,IS
ON
ON(CL)
is clamped to V
= 66 V (typ.), R
via V
V
bb
bb
. See also overvoltage protection.
Z1
ZG
. Using D
R
. With D
bb
V
S
ZG
D
IS
I
ON(Cl)
V
I
L(M)
, V
S
IS
V
bb
Z1
= 1 k
ZD
OUT
S
- 5 V
Data Sheet BTS6510
/ K
IS
S
gives faster deenergizing of
= 42 V typ. At inductive load
, V
IS
ilis
is clamped to V
nominal (or 1 k
OUT
the voltage V
.
V
PROFET
Z,IS
is clamped to V
IS
S
= I
R
IS
L
/k
+ V
OUT
ilis
IS
2003-Oct-01
OUT(CL)
V
V
ON
bb
OUT
can reach
can be
out
L(M)
V
/n, if n
IS
- V
bb
, R
=
IS
-
IS
>

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