MTD3N25E Motorola, MTD3N25E Datasheet - Page 3

• Manufacturer Part Number: MTD3N25E
• Description: TMOS POWER FET 3 AMPERES 250 VOLTS RDS
• Manufacturer: Motorola

Motorola TMOS Power MOSFET Transistor Device Data
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
2.0
1.6
1.2
0.8
0.4
– 50
6
5
4
3
2
1
0
0
0
Figure 3. On–Resistance versus Drain Current
V GS = 10 V
0.5
V GS = 10 V
I D = 1.5 A
T J = 25 C
1
– 25
Figure 5. On–Resistance Variation with
Figure 1. On–Region Characteristics
1.0
V DS , DRAIN–TO–SOURCE VOLTAGE (VOLTS)
2
1.5
T J , JUNCTION TEMPERATURE ( C)
0
I D , DRAIN CURRENT (AMPS)
3
2.0
and Temperature
25
Temperature
4
2.5
V GS = 10 V
T J = 100 C
50
– 55 C
3.0
5
25 C
3.5
TYPICAL ELECTRICAL CHARACTERISTICS
6
75
4.0
7 V
7
100
4.5
8
5.0 5.5
125
9
6 V
5 V
4 V
150
10
6.0
100
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
1.0
10
6
5
4
3
2
1
0
2.0
0
0
Figure 4. On–Resistance versus Drain Current
V GS = 0 V
T J = 25 C
0.5
2.5
V DS 10 V
Figure 6. Drain–To–Source Leakage
Figure 2. Transfer Characteristics
1.0
V DS , DRAIN–TO–SOURCE VOLTAGE (VOLTS)
3.0
V GS , GATE–TO–SOURCE VOLTAGE (VOLTS)
50
1.5
3.5
Current versus Voltage
I D , DRAIN CURRENT (AMPS)
2.0
and Gate Voltage
V GS = 10 V
T J = 125 C
4.0
15 V
100
100 C
25 C
2.5
4.5
3.0
5.0
3.5
150
T J = – 55 C
5.5
4.0
6.0
4.5
MTD3N25E
200
100 C
6.5
5.0
7.0
25 C
5.5
3
250
7.5
6.0