MTD9N10E Motorola, MTD9N10E Datasheet - Page 3

• Manufacturer Part Number: MTD9N10E
• Description: TMOS POWER FET
• Manufacturer: Motorola

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Motorola TMOS Power MOSFET Transistor Device Data
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
18
16
14
12
10
– 50
8
6
4
2
0
0
0
Figure 3. On–Resistance versus Drain Current
V GS = 10 V
I D = 4.5 A
V GS = 10 V
– 25
1
Figure 5. On–Resistance Variation with
2
Figure 1. On–Region Characteristics
V DS , DRAIN–TO–SOURCE VOLTAGE (VOLTS)
V GS = 10 V
2
4
T J , JUNCTION TEMPERATURE ( C)
0
I D , DRAIN CURRENT (AMPS)
3
and Temperature
6
25
Temperature
4
8
T J = 100 C
50
5
25 C
8 V
– 55 C
10
TYPICAL ELECTRICAL CHARACTERISTICS
6
75
12
6 V
7 V
5 V
4 V
7
100
14
8
T J = 25 C
125
16
9
150
10
18
0.25
0.23
0.21
0.19
0.17
0.15
100
1.0
0.1
18
16
14
12
10
10
8
6
4
2
0
2.0
30
0
Figure 4. On–Resistance versus Drain Current
T J = 25 C
V DS 10 V
2.5
V GS = 0 V
2
3.0
40
Figure 6. Drain–To–Source Leakage
Figure 2. Transfer Characteristics
V GS , GATE–TO–SOURCE VOLTAGE (VOLTS)
V DS , DRAIN–TO–SOURCE VOLTAGE (VOLTS)
3.5
4
T J = 125 C
Current versus Voltage
4.0 4.5 5.0
50
I D , DRAIN CURRENT (AMPS)
and Gate Voltage
6
V GS = 10 V
15 V
100 C
60
8
5.5
10
6.0
70
T J = – 55 C
6.5
12
7.0
80
MTD9N10E
14
25 C
100 C
7.5
8.0
90
16
25 C
8.5
3
18
100
9.0