MTP3N100E Motorola, MTP3N100E Datasheet - Page 6

• Manufacturer Part Number: MTP3N100E
• Description: TMOS POWER FET 3.0 AMPERES 1000 VOLTS
• Manufacturer: Motorola

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MTP3N100E
6
0.01
100
1.0
0.1
10
0.1
Figure 11. Maximum Rated Forward Biased
V GS = 20 V
SINGLE PULSE
T C = 25 C
0.01
1.0
0.1
1.0E–05
V DS , DRAIN–TO–SOURCE VOLTAGE (VOLTS)
D = 0.5
0.2
0.1
1.0
Safe Operating Area
1.0E–04
R DS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10
SINGLE PULSE
0.02
0.01
0.05
10 s
100 s
Figure 14. Diode Reverse Recovery Waveform
1 ms
100
I S
10 ms
1.0E–03
SAFE OPERATING AREA
dc
Figure 13. Thermal Response
t p
1000
di/dt
t a
t, TIME (s)
1.0E–02
t rr
P (pk)
Motorola TMOS Power MOSFET Transistor Device Data
t b
250
200
150
100
I S
50
0
25
DUTY CYCLE, D = t 1 /t 2
0.25 I S
Figure 12. Maximum Avalanche Energy versus
t 1
t 2
T J , STARTING JUNCTION TEMPERATURE ( C)
Starting Junction Temperature
50
1.0E–01
TIME
75
R JC (t) = r(t) R JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t 1
T J(pk) – T C = P (pk) R JC (t)
1.0E+00
100
125
I D = 3 A
1.0E+01
150