VN2450N3 Supertex Inc, VN2450N3 Datasheet - Page 2

• Manufacturer Part Number: VN2450N3
• Description: N-Channel Enhancement-Mode Vertical DMOS FETs
• Manufacturer: Supertex Inc

Thermal Characteristics
*
†
Electrical Characteristics
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant P
I
D
OUTPUT
TO-243AA
TO-92
Symbol
BV
V
∆V
I
I
I
R
∆R
G
C
C
C
t
t
t
t
V
(continuous) is limited by max rated T
GSS
DSS
D(ON)
d(ON)
r
d(OFF)
f
Package
GS(th)
DS(ON)
ISS
OSS
RSS
SD
INPUT
FS
GS(th)
DSS
DS(ON)
10V
V
0V
0V
DD
Drain-to-Source
Breakdown Voltage
Parameter
Gate Threshold Voltage
Change in V
Gate Body Leakage
Zero Gate Voltage Drain Current
ON-State Drain Current
Change in R
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage Drop
Static Drain-to-Source
ON-State Resistance
10%
I
D
(continuous)*
t
0.25A
d(ON)
0.2A
10%
t
(ON)
GS(th)
DS(ON)
90%
j
.
t
r
with Temperature
with Temperature
I
D
90%
t
d(OFF)
(pulsed)
0.75A
0.65A
t
(OFF)
(@ 25°C unless otherwise specified)
D
increase possible on ceramic substrate.
t
90%
F
10%
Power Dissipation
Min
500
1.5
0.5
50
@ T
2
1.6W
C
1W
= 25
Typ
†
°
C
GENERATOR
Max
-5.5
100
150
1.7
1.5
10
20
13
50
25
10
10
25
20
PULSE
1
°
125
C/W
INPUT
R
θ
15
gen
jc
mV/°C
%/°C
Unit
m
mA
nA
µA
pF
ns
V
A
V
V
Ω
V
V
V
V
V
V
V
V
V
V
V
°
V
T
V
f = 1.0 MHz
V
I
R
D
78
170
C/W
GS
GS
GS
GS
GS
GS
GS
GS
GS
DS
GS
θ
A
GS
DD
GS
GEN
= 250mA,
ja
= 125°C
†
= V
= V
= 10V, V
= 4.5V, I
= 10V, I
= 25V, I
= ±20V, V
= 0V, V
= 0V, V
= 10V, I
= 0V, I
= 0V, I
= 0V, V
= 25V,
= 25Ω
DS
DS
, I
, I
SD
D
DS
DS
D
Conditions
D
D
D
DS
D
D
0.25A
DS
0.2A
= 2.0mA
I
= 400mA
= 400mA
= 1.0mA
= 1.0mA
= 400mA
= 200mA
DS
= 100mA
DR
= Max Rating
= 0.8 Max Rating
= 25V
= 25V
*
= 0V
V
DD
R
L
D.U.T.
OUTPUT
0.75A
0.65A
I
DRM
VN2450