TN2130 Supertex Inc, TN2130 Datasheet - Page 2

• Manufacturer Part Number: TN2130
• Description: N-Channel Enhancement-Mode Vertical DMOS FETs
• Manufacturer: Supertex Inc

Thermal Characteristics
*
Electrical Characteristics
Switching Waveforms and Test Circuit
OUTPUT
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
I
Package
TO-236AB
D
INPUT
Symbol
BV
V
∆V
I
I
I
R
∆R
G
C
C
C
t
t
t
t
V
t
(continuous) is limited by max rated T
GSS
DSS
D(ON)
d(ON)
r
d(OFF)
f
rr
GS(th)
SD
DS(ON)
ISS
OSS
RSS
FS
DSS
GS(th)
DS(ON)
10V
V
0V
0V
DD
10%
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Change in V
Gate Body Leakage
Zero Gate Voltage Drain Current
ON-State Drain Current
Static Drain-to-Source ON-State Resistance
Change in R
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage Drop
Reverse Recovery Time
I
D
t
(continuous)*
d(ON)
10%
t
(ON)
85mA
GS(th)
DS(ON)
90%
t
r
j
.
with Temperature
Parameter
with Temperature
90%
t
d(OFF)
I
D
t
(OFF)
200mA
(pulsed)
(@ 25°C unless otherwise specified)
t
90%
F
10%
Min
Power Dissipation
300
250
0.8
@ T
2
0.36W
A
Typ
250
400
= 25
°
C
GENERATOR
PULSE
Max
-5.5
100
100
2.4
1.1
1.8
10
25
50
15
10
12
15
5
7
INPUT
R
gen
°
mV/°C
200
C/W
%/°C
θ
Unit
m
mA
nA
µA
µA
pF
ns
ns
jc
Ω
V
V
V
I
V
I
V
V
V
T
V
V
V
V
V
V
I
R
I
I
°
D
D
D
SD
SD
350
C/W
A
DD
GS
GS
GS
GS
GS
GS
GS
DS
GS
GEN
θ
= 120mA
= 1mA, V
= 1mA, V
ja
= 125°C
= 120mA, V
= 120mA, V
= 4.5V, I
= 0V, V
= V
= ±20V, V
= 0V, V
= 0V, V
= 10V, V
= 4.5V, I
= 25V, I
= 25V,
= 25Ω
DS
Conditions
, I
85mA
DS
GS
GS
D
DS
DS
I
D
D
V
DR
D
DS
= 1mA
= 100mA
DD
DS
= 120mA
= 25V, f = 1MHz
= 0V
= Max Rating
= 0.8 Max Rating
= 120mA
*
= V
GS
GS
R
= 25V
L
= 0V
= 0V
= 0V
DS
D.U.T.
OUTPUT
200mA
I
DRM
TN2130