MTB60N06HD Motorola, MTB60N06HD Datasheet
MTB60N06HD
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MTB60N06HD Summary of contents
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... Preferred devices are Motorola recommended choices for future use and best overall value. REV 2 Motorola TMOS Power MOSFET Transistor Device Data Motorola, Inc. 1995 D G Rating 10 ms) Order this document by MTB60N06HD/D MTB60N06HD Motorola Preferred Device TMOS POWER FET 60 AMPERES 60 VOLTS R DS(on) = 0.014 OHM CASE 418B–02, Style PAK ...
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... MTB60N06HD ELECTRICAL CHARACTERISTICS ( unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage ( Vdc 250 Adc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current ( Vdc Vdc Vdc Vdc 125 C) Gate–Body Leakage Current ...
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... Figure 4. On–Resistance versus Drain Current 1000 100 10 1 100 125 150 DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 6. Drain–to–Source Leakage MTB60N06HD 100 – 3.6 4.4 5.2 6.0 6.8 7 ...
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... MTB60N06HD Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals ( t) are deter- mined by how fast the FET input capacitance can be charged by current from the generator. The published capacitance data is difficult to use for calculat- ing rise and fall because drain– ...
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... In addition, power dissipation incurred from switching the diode will be less due to the shorter recovery time and lower switching losses 0.6 0.7 0.8 0 SOURCE–TO–DRAIN VOLTAGE (VOLTS) MTB60N06HD d(off) t d(on) 10 100 GATE RESISTANCE (Ohms) 1.0 5 ...
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... MTB60N06HD The Forward Biased Safe Operating Area curves define the maximum simultaneous drain–to–source voltage and drain current that a transistor can handle safely when it is for- ward biased. Curves are based upon maximum peak junc- tion temperature and a case temperature ( Peak ...
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... Mounted on the minimum recommended footprint 2.5 Collector/Drain Pad Size 2.0 1.5 1 TIME 0 AMBIENT TEMPERATURE ( C) Figure 16 PAK Power Derating Curve MTB60N06HD R JC ( CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME J(pk) – (pk (t) 1.0E+00 1.0E+01 450 mils x 350 mils 75 100 125 150 ...
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... MTB60N06HD INFORMATION FOR USING THE D 2 PAK SURFACE MOUNT PACKAGE RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to ensure proper solder connection interface ...
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... Due to shadowing and the inability to set the wave height to incorporate other surface mount components, the D 2 PAK is not recommended for wave soldering. MTB60N06HD Ç Ç Ç Ç Ç Ç Ç Ç ...
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... MTB60N06HD For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones, and a figure for belt speed. Taken together, these control settings make up a heating “profile” for that particular circuit board. On machines controlled by a computer, the computer remembers these profiles from one operating session to the next ...
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... Motorola TMOS Power MOSFET Transistor Device Data PACKAGE DIMENSIONS STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE K 4. DRAIN J H CASE 418B–02 ISSUE B MTB60N06HD NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.340 0.380 8.64 9 ...
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... EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4–32–1, Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 12 *MTB60N06HD/D* Motorola TMOS Power MOSFET Transistor Device Data MTB60N06HD/D ...