RJP30E3DPP-M0 Renesas, RJP30E3DPP-M0 Datasheet

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RJP30E3DPP-M0

Manufacturer Part Number
RJP30E3DPP-M0
Description
N-Channel Power MOSFET
Manufacturer
Renesas
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
RJP30E3DPP-M0
Manufacturer:
RENESAS
Quantity:
12 500
RJP30E3DPP-M0
Silicon N Channel IGBT
High Speed Power Switching
Features
• Trench gate technology (G5H series)
• Low collector to emitter saturation voltage V
• High speed switching tf = 150 ns typ
• Low leak current I
• Isolated package TO-220FL
Outline
Absolute Maximum Ratings
Collector to Emitter voltage
Gate to Emitter voltage
Collector current
Collector peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
R07DS0353EJ0200 Rev.2.00
Apr 15, 2011
2. Tc = 25°C
RENESAS Package code: PRSS0003AF-A)
(Package name: TO-220FL)
CES
Item
= 1 μA max
1
2 3
CE(sat)
= 1.6 V typ
V
V
I
ic(peak)
P
θj-c
Tj
Tstg
C
CES
GES
C
Note2
www.DataSheet.co.kr
Symbol
G
Note1
C
E
360
±30
40
250
30
4.17
150
–55 to +150
Preliminary
Ratings
1. Gate
2. Collector
3. Emitter
R07DS0353EJ0200
V
V
A
A
W
°C/ W
°C
°C
Datasheet
Apr 15, 2011
Unit
(Ta = 25°C)
Page
Rev.2.00
1
of 6
Datasheet pdf - http://www.DataSheet4U.net/

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RJP30E3DPP-M0 Summary of contents

Page 1

... RJP30E3DPP-M0 Silicon N Channel IGBT High Speed Power Switching Features • Trench gate technology (G5H series) • Low collector to emitter saturation voltage V • High speed switching tf = 150 ns typ • Low leak current μA max CES • Isolated package TO-220FL Outline RENESAS Package code: PRSS0003AF-A) ...

Page 2

... RJP30E3DPP-M0 Electrical Characteristics Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reveres transfer capacitance Total gate charge Gate to emitter charge Gate to collector charge Switching time Notes: 3. Pulse test. ...

Page 3

... RJP30E3DPP-M0 Main Characteristics Maximum Safe Operation Area 1000 100 ° 1 shot pulse 0.01 0 Collector to Emitter Voltage V Typical Output Characteristics (2) 200 8 V Pulse Test ° 160 120 Collector to Emitter Voltage V Collector to Emitter Saturation Voltage vs ...

Page 4

... RJP30E3DPP-M0 Typical Capacitance vs. Collector To Emitter Voltage 10000 MHz ° 1000 100 Collector To Emitter Voltage V Switching Characteristics (Typical) (1) 1000 V = 150 Ω ° 100 t d(off d(on Collector Current I Switching Characteristics (Typical) (3) 1000 = 4 Ω ...

Page 5

... RJP30E3DPP-M0 Normalized Transient Thermal Impedance vs. Pulse Width 0.5 0.3 0.2 0.1 0.03 0.01 0.003 0.001 1 0 μ μ Switching Time Test Circuit Ic Monitor R L Vin Monitor Rg D.U.T. Vin = 15 V R07DS0353EJ0200 Rev.2.00 Apr 15, 2011 θj − c(t) = γ s (t) • θj − c θj − 4.17 °C/ °C ...

Page 6

... RJP30E3DPP-M0 Package Dimension Package Name JEITA Package Code RENESAS Code ⎯ TO-220FL PRSS0003AF-A 10.0 ± 0.3 2.54 ± 0.25 Ordering Information Orderable Part Number RJP30E3DPP-M0-T2 R07DS0353EJ0200 Rev.2.00 Apr 15, 2011 Previous Code MASS[Typ.] TO-220FL 1.5g 2.8 ± 0.2 φ 3.2 ± 0.2 1.15 ± 0.2 1.15 ± 0.2 0.75 ± 0.15 0.40 ± 0.15 2.54 ± 0.25 www.DataSheet.co.kr Quantity 600 pcs ...

Page 7

... Electronics product for any application categorized as "Specific" without the prior written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an application categorized as " ...

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