MT16LSDT12864AG-133B1 Micron, MT16LSDT12864AG-133B1 Datasheet - Page 22

• Manufacturer Part Number: MT16LSDT12864AG-133B1
• Description: DRAM Module, 512MB/1GB (x64), 168-PIN SDRAM DIMM
• Manufacturer: Micron

Table 22: Serial Presence-Detect Matrix (Continued)
V
NOTE:
64,128 Meg x 64 SDRAM DIMMs
SD8_16C64_128x64AG_A.fm - Rev. A 11/02 EN
1. The value of
DD
99-125
BYTE
36-61
65-71
73-90
95-98
126
127
31
32
33
34
35
62
63
64
72
91
92
93
94
= +3.3V ±0.3V; “1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW”
DESCRIPTION
MODULE BANK DENSITY
COMMAND AND ADDRESS SETUP TIME,
COMMAND AND ADDRESS HOLD TIME,
DATA SIGNAL INPUT SETUP TIME,
DATA SIGNAL INPUT HOLD TIME,
RESERVED
SPD REVISION
CHECKSUM FOR BYTES 0-62
MANUFACTURER’S JEDEC ID CODE
MANUFACTURER’S JEDEC ID CODE(CONT.)
MANUFACTURING LOCATION
MODULE PART NUMBER (ASCII)
PCB IDENTIFICATION CODE
IDENTIFICATION CODE (CONT.)
YEAR OF MANUFACTURE IN BCD
WEEK OF MANUFACTURE IN BCD
MODULE SERIAL NUMBER
MANUFACTURER-SPECIFIC DATA (RSVD)
SYSTEM FREQUENCY
SDRAM COMPONENT & CLOCK DETAIL
t
RAS used for -13E modules is calculated from
t
t
DH
DS
t
t
AH,
AS,
t
t
CMS
CMH
22
t
RC -
1.5ns (-13E/-133)
0.8ns (-13E/-133)
1.5ns (-13E/-133)
0.8ns (-13E/-133)
100 MHz (-13E/
t
(VERSION)
RP. Actual device spec. value is 37ns.
-133/-10E)
2ns (-10E)
1ns (-10E)
2ns (-10E)
1ns (-10E)
MICRON
REV. 1.2
ENTRY
512MB
(-13E)
(-133)
(-10E)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
0
168-PIN SDRAM DIMMs
MT8LSDT6464A
Variable Data
Variable Data
Variable Data
Variable Data
512MB / 1GB (x64)
01 - 06
01-04
5A
CC
2C
AF
80
15
20
08
10
15
20
08
10
00
12
12
00
64
FF
MT16LSDT12864A
©2002, Micron Technology Inc.
Variable Data
Variable Data
Variable Data
Variable Data
ADVANCE
01 - 06
01-04
CD
5B
2C
80
15
20
08
10
15
20
08
10
00
12
13
00
64
FF
FF