MT16LSDT1664AG-10E Micron, MT16LSDT1664AG-10E Datasheet - Page 11

• Manufacturer Part Number: MT16LSDT1664AG-10E
• Description: DRAM Module
• Manufacturer: Micron

ABSOLUTE MAXIMUM RATINGS*
Voltage on V
Voltage on Inputs, NC or I/O Pins
Operating Temperature,
Storage Temperature (plastic) ............ -55°C to +150°C
Power Dissipation, 64MB ............................................ 8W
Power Dissipation, 128MB ....................................... 16W
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS - 128MB Module
(Notes: 1, 5, 6; notes appear following parameter tables); (V
8, 16 Meg x 64 SDRAM DIMMs
SD8_16C8_16X64AG_A.p65 – Rev. A, Pub. 4/02
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS - 64MB Module
(Notes: 1, 5, 6; notes appear following parameter tables); (V
PARAMETER/CONDITION
SUPPLY VOLTAGE
INPUT HIGH VOLTAGE: Logic 1; All inputs
INPUT LOW VOLTAGE: Logic 0; All inputs
INPUT LEAKAGE CURRENT:
Any input 0V ≤ V
(All other pins not under test = 0V)
OUTPUT LEAKAGE CURRENT: DQ pins
are disabled;0V ≤ V
OUTPUT LEVELS:
Output High Voltage (I
Output Low Voltage (I
PARAMETER/CONDITION
SUPPLY VOLTAGE
INPUT HIGH VOLTAGE: Logic 1; All inputs
INPUT LOW VOLTAGE: Logic 0; All inputs
INPUT LEAKAGE CURRENT:
Any input 0V ≤ V
(All other pins not under test = 0V)
OUTPUT LEAKAGE CURRENT: DQ pins
are disabled; 0V ≤ V
OUTPUT LEVELS:
Output High Voltage (I
Output Low Voltage (I
T
A ..................................................................................
Relative to V
Relative to V
DD
, V
DD
SS
SS
IN
IN
Q Supply
....................................... -1V to +4.6V
....................................... -1V to +4.6V
≤ V
OUT
≤ V
OUT
DD
DD
≤ V
OUT
OUT
≤ V
OUT
OUT
DD
DD
= 4mA)
= 4mA)
= -4mA)
= -4mA)
Q
Q
0°C to +70°C
Command and
Address Inputs
CKE0, CKE1
CK0-CK3, S0#-S3#
DQ, DQMB
DQ
Command and
Address Inputs
CK0, CK2, S0#, S2#
DQ, DQMB
DQ
11
*Stresses greater than those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only, and functional
operation of the device at these or any other conditions
above those indicated in the operational sections of
this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect reliability.
DD
DD
, V
, V
DD
DD
Q = +3.3V ±0.3V)
Q = +3.3V ±0.3V)
SYMBOL
V
SYMBOL
V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
DD
V
V
V
V
V
V
, V
V
I
, V
V
I
OZ
OZ
I
I
OH
OH
OL
OL
IH
IH
I
I
IL
IL
DD
168-PIN SDRAM DIMMs
DD
Q
Q
64MB / 128MB (x64)
M I N
M I N
-0.3
-0.3
-80
-40
-20
-10
-10
-40
-20
2.4
2.4
-5
-5
3
2
–
3
2
–
V
V
DD
DD
M A X
M A X
3.6
0.8
0.4
3.6
0.8
0.4
80
40
20
10
10
40
20
–
5
5
–
+ 0.3
+ 0.3
UNITS NOTES
UNITS NOTES
©2002, Micron Technology, Inc.
µA
µA
µA
µA
V
V
V
V
V
V
V
V
V
V
22
22
32
22
22
32