MT16LSDT1664AG-10E Micron, MT16LSDT1664AG-10E Datasheet - Page 21

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MT16LSDT1664AG-10E

Manufacturer Part Number
MT16LSDT1664AG-10E
Description
DRAM Module
Manufacturer
Micron
Datasheet
SERIAL PRESENCE-DETECT MATRIX (continued)
(Notes: 1, 2)
NOTE: 1. “1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW.”
8, 16 Meg x 64 SDRAM DIMMs
SD8_16C8_16X64AG_A.p65 – Rev. A, Pub. 4/02
99-125 MANUFACTURER-SPECIFIC DATA (RSVD)
36-61
65-71
73-90
95-98
BYTE
126
127
30
31
32
33
34
35
62
63
64
72
91
92
93
94
2. x = Variable Data.
3. The value of
MINIMUM RAS# PULSE WIDTH,
(Note: 3)
MODULE BANK DENSITY
COMMAND AND ADDRESS SETUP TIME,
t
COMMAND AND ADDRESS HOLD TIME,
t
DATA SIGNAL INPUT SETUP TIME,
DATA SIGNAL INPUT HOLD TIME,
RESERVED
SPD REVISION
CHECKSUM FOR BYTES 0-62
MANUFACTURER’S JEDEC ID CODE
MANUFACTURING LOCATION
PCB IDENTIFICATION CODE
IDENTIFICATION CODE (CONT.)
YEAR OF MANUFACTURE IN BCD
WEEK OF MANUFACTURE IN BCD
MODULE SERIAL NUMBER
SYSTEM FREQUENCY
SDRAM COMPONENT & CLOCK DETAIL
MANUFACTURER’S JEDEC ID CODE (CONT.)
MODULE PART NUMBER (ASCII)
CMS
CMH
DESCRIPTION
t
RAS used for -13E modules is calculated from
t
RAS
t
t
DH
DS
t
t
AH,
AS,
100 MHz (-13E/-133/-10E)
ENTRY (VERSION)
1.5 (-13E/-133)
0.8 (-13E/-133)
1.5 (-13E/-133)
0.8 (-13E/-133)
45 (-13E)
50 (-10E)
REV. 1.2
44 (133)
MICRON
2 (-10E)
1 (-10E)
2 (-10E)
1 (-10E)
64MB
(-13E)
(-133)
(-10E)
1 - 11
21
1 - 9
0
t
RC -
t
RP. Actual device spec. value is 37ns.
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT8LSDT864A
168-PIN SDRAM DIMMs
01 - 0B
01 - 09
2D
9D
AF
2C
32
10
15
20
08
10
15
20
08
10
00
12
57
E5
2C
FF
00
64
xx
xx
xx
xx
64MB / 128MB (x64)
MT16LSDT864A
©2002, Micron Technology, Inc.
01 - 0B
01 - 09
2D
2C
32
10
15
20
08
10
15
20
08
10
00
12
58
9E
E6
2C
FF
00
64
FF
xx
xx
xx
xx

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