MT16LSDT6464 Micron, MT16LSDT6464 Datasheet

no-image

MT16LSDT6464

Manufacturer Part Number
MT16LSDT6464
Description
168-Pin SDRAM DIMMs (x64)
Manufacturer
Micron
Datasheet
SYNCHRONOUS
DRAM MODULE
FEATURES
• PC100- and PC133-compliant
• JEDEC-standard 168-pin, dual in-line memory
• Utilizes 100 MHz and 133 MHz SDRAM
• Unbuffered
• 256MB (32 Meg x 64) and 512MB (64 Meg x 64)
• Single +3.3V ±0.3V power supply
• Fully synchronous; all signals registered on
• Internal pipelined operation; column address can
• Internal SDRAM banks for hiding row access/
• Programmable burst lengths: 1, 2, 4, 8, or full page
• Auto Precharge and Auto Refresh Modes
• Self Refresh Mode
• 64ms, 8,192-cycle refresh
• LVTTL-compatible inputs and outputs
• Serial Presence-Detect (SPD)
OPTIONS
• Package
• Frequency/CAS Latency
ADDRESS TABLE
32, 64 Meg x 64 SDRAM DIMMs
SD8_16C32_64x64AG_B.p65–Rev. B, Pub. 8/01
DEVICE TIMING
Refresh Count
Device Banks
Row Addressing
Column Addressing
Module Banks
module (DIMM)
components
positive edge of system clock
be changed every clock cycle
precharge
Unbuffered
168-pin DIMM (gold)
133 MHz/CL = 2
133 MHz/CL = 3
100 MHz/CL = 2
Markings
Module
-13E
-133
-10E
CL -
4 (BA0, BA1)
8K (A0–A12)
1K (A0–A9)
Module
1 (S0,S2)
256MB
2 - 2 - 2
2 - 2 - 2
2 - 2 - 2
PC100
t
RCD -
8K
t
RP
CL -
2 (S0,S2; S1,S3)
4 (BA0, BA1)
8K (A0–A12)
1K (A0–A9)
MARKING
Module
2 - 2 - 2
3 - 3 - 3
512MB
PC133
t
RCD -
NA
8K
-13E
-10E
-133
A
G
t
RP
1
MT8LSDT3264A - 256MB
MT16LSDT6464A - 512MB
For the latest data sheet, please refer to the Micron Web
site:
PART NUMBERS
NOTE: The designators for component and PCB revision are the
PART NUMBER
MT8LSDT3264AG-13E_
MT8LSDT3264AG-133_
MT8LSDT3264AG-10E_
MT16LSDT6464AG-13E_
MT16LSDT6464AG-133_
MT16LSDT6464AG-10E_
www.micron.com/datasheets
last two characters of each part number Consult
factory for current revision codes. Example:
MT16LSDT6464AG-133B1.
168-PIN SDRAM DIMMs
256MB / 512MB (x64)
168-Pin DIMM
168-Pin DIMM
Low Profile
Standard
CONFIGURATION SYSTEM BUS SPEED
32 Meg x 64
32 Meg x 64
32 Meg x 64
64 Meg x 64
64 Meg x 64
64 Meg x 64
©2001, Micron Technology, Inc.
133 MHz
133 MHz
100 MHz
133 MHz
133 MHz
100 MHz

Related parts for MT16LSDT6464

MT16LSDT6464 Summary of contents

Page 1

... BA1) Row Addressing 8K (A0–A12) Column Addressing 1K (A0–A9) Module Banks 1 (S0,S2) 32, 64 Meg x 64 SDRAM DIMMs SD8_16C32_64x64AG_B.p65–Rev. B, Pub. 8/01 MT8LSDT3264A - 256MB MT16LSDT6464A - 512MB For the latest data sheet, please refer to the Micron Web site: www.micron.com/datasheets MARKING A G -13E -133 -10E ...

Page 2

... GENERAL DESCRIPTION The MT8LSDT3264A and MT16LSDT6464A are high-speed CMOS, dynamic random-access, 256MB and 512MB memory modules organized in a x64 con- figuration. These modules use internally configured quad-bank SDRAMs with a synchronous interface (all signals are registered on the positive edge of the clock signals CK0-CK3). ...

Page 3

... BA0: SDRAMs U1-U4/U6-U9 BA1: SDRAMs U1-U4/U6-U9 SDRAMs U1-U4/U6-U9 2.2 F CK1, CK3 SDRAMs U1-U4/U6-U9 SPD U10 SDA U1-U4/U6-U9 = MT48LC32M8A2TG SDRAMs SA0 SA1 SA2 3 256MB / 512MB (x64) 168-PIN SDRAM DIMMs DQM CS# U2 DQM CS# U4 DQM CS# U6 DQM CS 3.3pF 3.3pF 10pF ©2001, Micron Technology, Inc. ...

Page 4

... SA0 SA1 NOTE: 1. All resistor values are 10 ohms unless otherwise specified. 2. Reference designators in this diagram do not necessarily match the actual module. 32, 64 Meg x 64 SDRAM DIMMs SD8_16C32_64x64AG_B.p65–Rev. B, Pub. 8/01 FUNCTIONAL BLOCK DIAGRAM MT16LSDT6464A (512MB) S1# DQM CS# DQ0 U1 DQ1 U19 DQ2 DQ3 ...

Page 5

... LOAD MODE REGISTER command. WP Input Write Protect: Serial presence-detect hardware write protect. SCL Input Serial Clock for Presence-Detect: SCL is used to synchronize the presence-detect data transfer to and from the module. 5 256MB / 512MB (x64) 168-PIN SDRAM DIMMs DESCRIPTION ©2001, Micron Technology, Inc. ...

Page 6

... V Supply Power Supply: +3.3V ±0.3V Supply Ground – Not Connected: These pins are not connected on this module. 6 256MB / 512MB (x64) 168-PIN SDRAM DIMMs DESCRIPTION ©2001, Micron Technology, Inc. ...

Page 7

... The remaining (least significant) address bit(s) is (are) used to select the starting location within the block. Full-page bursts wrap within the page if the boundary is reached, as shown in the Burst Definition Table (Pg. 8). 7 256MB / 512MB (x64) 168-PIN SDRAM DIMMs ©2001, Micron Technology, Inc. ...

Page 8

... A0-A9 select the starting column. 6. Whenever a boundary of the block is reached within a given sequence above, the following access wraps within the block. 7. For a burst length of one, A0-A9 select the unique column to be accessed, and mode register bit M3 is ignored. 0-1 1-0 0-1-2-3 1-0-3-2 2-3-0-1 3-2-1-0 0-1-2-3-4-5-6-7 1-0-3-2-5-4-7-6 2-3-0-1-6-7-4-5 3-2-1-0-7-6-5-4 4-5-6-7-0-1-2-3 5-4-7-6-1-0-3-2 6-7-4-5-2-3-0-1 7-6-5-4-3-2-1-0 Not supported ©2001, Micron Technology, Inc. ...

Page 9

... D OUT -10E NOP NOP OUT t AC DON’T CARE UNDEFINED 9 256MB / 512MB (x64) 168-PIN SDRAM DIMMs CAS Latency Table ALLOWABLE OPERATING FREQUENCY (MHz) CAS CAS LATENCY = 2 LATENCY = 3 133 143 100 133 100 125 ©2001, Micron Technology, Inc. ...

Page 10

... – – – – L – – – – ADDR DQs NOTES Bank/Row X 3 Bank/Col X 4 Bank/Col Valid 4 X Active Code Op-code X 2 – Active 8 – High-Z 8 ©2001, Micron Technology, Inc. ...

Page 11

... UNITS NOTES -0.3 0 -40 40 µ µA 2.4 – – 0 UNITS NOTES -0.3 0 -80 80 µA I -10 10 µA 2.4 – – 0 ©2001, Micron Technology, Inc ...

Page 12

... ‡ 4,560 4,320 4,320 ‡ ‡ ©2001, Micron Technology, Inc. 3, 18, 19 12, 19 18, 19 12, 18, 19, 30 18, 19 12, 19 18, 19 12, 18, 19, 30 ...

Page 13

... SDRAM DIMMs 256MB SYMBOL MIN MAX 13 2.5 3 – 512MB MIN MAX UNITS 40 60 13 – ©2001, Micron Technology, Inc. ...

Page 14

... CLK + 7.5ns 7ns ©2001, Micron Technology, Inc. NOTES ...

Page 15

... ©2001, Micron Technology, Inc. ...

Page 16

... IL 3ns. t RP) begins 7ns for -13E; 7.5ns for -133 and t RAS. use in -13E speed grade module 45ns 10ns; for -133 and 7.5ns. t RP; clock( 7.5ns for - undershoot limit is actu- DD ©2001, Micron Technology, Inc. ...

Page 17

... SCL SDA DATA STABLE Figure 3 17 256MB / 512MB (x64) 168-PIN SDRAM DIMMs START BIT Figure 2 Definition of Start and Stop 8 9 Acknowledge ©2001, Micron Technology, Inc. STOP BIT ...

Page 18

... Start, Device Select Address reSTART, Device Select Similar to Current or Random Address Read START, Device Select START, Device Select SU:DAT t SU:STO MIN 4 4.7 250 4.7 4 BUF UNDEFINED MAX UNITS µs µs 1 µs ns µs µs ©2001, Micron Technology, Inc. ...

Page 19

... DH 300 300 ns t HD:DAT 0 µs t HD:STA 4 µs t HIGH 4 µ 100 ns t LOW 4.7 µ µs t SCL 100 KHz t SU:DAT 250 ns t SU:STA 4.7 µs t SU:STO 4.7 µs t WRC 10 ms ©2001, Micron Technology, Inc. UNITS µA µA µA mA NOTES 2 ...

Page 20

... RP 15 (-13E) 20 (-133/-10E) t RRD 14 (-13E) 15 (-133) 20 (-10E) t RCD 15 (-13E) 20 (-133/-10E) t RAS 45 (-13E) 44 (133) 50 (-10E 256MB / 512MB (x64) 168-PIN SDRAM DIMMs MT8LSDT3264AG MT16LSDT6464AG ...

Page 21

... AH, 0.8 (-13E/-133) 1 (-10E 1.5 (-13E/-133) 2 (-10E 0.8 (-13E/-133) 1 (-10E) REV. 1.2 (-13E) (-133) (-10E) MICRON 0 100 MHz (-13E/-133/-10E) 21 256MB / 512MB (x64) 168-PIN SDRAM DIMMs MT8LSDT3264AG MT16LSDT6464AG ...

Page 22

... SDRAM DIMMs 1.131 (28.73) 1.119 (28.42) .700 (17.78) TYP .128 (3.25) (2X) .118 (3.00) .050 (1.27) TYP PIN 84 (PIN 168 ON BACKSIDE) 1.380 (35.05) 1.370 (34.80) .700 (17.78) TYP .128 (3.25) (2X) .118 (3.00) .050 (1.27) TYP TYP PIN 84 (PIN 168 ON BACKSIDE) .125 (3.18) MAX .054 (1.37) .046 (1.17) .125 (3.18) MAX .054 (1.37) .046 (1.17) ©2001, Micron Technology, Inc. ...

Page 23

... TYP 4.550 (115.57) BACK VIEW MIN 23 256MB / 512MB (x64) 168-PIN SDRAM DIMMs 1.131 (28.73) 1.119 (28.42) .700 (17.78) TYP .128 (3.25) (2X) .118 (3.00) .050 (1.27) TYP PIN 84 (PIN 168 ON BACK SIDE) PIN 85 (PIN 1 ON FRONT SIDE) ©2001, Micron Technology, Inc. .157 (4.00) MAX .054 (1.37) .046 (1.17) ...

Page 24

... NOTE: 1. All dimensions in inches (millimeters) MAX or typical where noted. 8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900 E-mail: prodmktg@micronsemi.com, Internet: http://www.micronsemi.com, Customer Comment Line: 800-932-4992 Micron is a registered trademark and the Micron logo and M logo are trademarks of Micron Technology, Inc. 32, 64 Meg x 64 SDRAM DIMMs SD8_16C32_64x64AG_B.p65–Rev. B, Pub. 8/01 ...

Related keywords