MT18VDDT6472G-265 Micron, MT18VDDT6472G-265 Datasheet

no-image

MT18VDDT6472G-265

Manufacturer Part Number
MT18VDDT6472G-265
Description
512MB DDR SDRAM RDIMM
Manufacturer
Micron
Datasheet
DDR SDRAM
REGISTERED DIMM
Features
• 184-pin, dual in-line memory module (DIMM)
• Fast data transfer rates: PC1600 or PC2100
• Utilizes 200 MT/s, 266 MT/s DDR SDRAM
• Registered inputs with one-clock delay
• Phase-lock loop (PLL) clock driver to reduce loading
• Supports ECC error detection and correction
• 256MB (32 Meg x 72), 512MB (64 Meg x 72),
• V
• V
• 2.5V I/O (SSTL_2 compatible)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; center-
• Internal, pipelined double data rate (DDR)
• Bidirectional data strobe (DQS) transmitted/received
• Differential clock inputs CK and CK#
• Four internal device banks for concurrent operation
• Programmable burst lengths: 2, 4, or 8
• Auto precharge option
• Auto Refresh and Self Refresh Modes
• 15.625µs (256MB), 7.8125µs (512MB ,1GB, and 2GB)
• Serial Presence Detect (SPD) with EEPROM
• Programmable READ CAS latency
• Gold edge contacts
Table 1:
pdf: 09005aef808a331f, source: 09005aef80858037
DD18C32_64_128_256x72G.fm - Rev. E 9/04 EN
Refresh Count
Row Addressing
Device Bank Addressing
Device Configuration
Column Addressing
Module Rank Addressing
components
1GB (128 Meg x 72), or 2GB (256 Meg x 72)
aligned with data for WRITEs
architecture; two data accesses per clock cycle
with data—i.e., source-synchronous data capture
maximum average periodic refresh interval
DD
DDSPD
= V
DD
= +2.3V to +3.6V
Q = +2.5V
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.
Address Table
128Mb (32 Meg x 4)
2K (A0–A9, A11)
4 (BA0, BA1)
4K (A0–A11)
256MB
1 (S0#)
4K
256MB, 512MB, 1GB, 2GB (x72, ECC, SR)
256Mb (64 Meg x 4)
2K (A0–A9, A11)
4 (BA0, BA1)
8K (A0–A12)
512MB
1 (S0#)
1
8K
NOTE:
MT18VDDT3272 – 256MB
MT18VDDT6472 – 512MB
MT18VDDT12872 – 1GB
MT18VDDT25672 – 2GB
For the latest data sheet, please refer to the Micron
site:
OPTIONS
• Package
• Memory clock/Speed, CAS
• PCB
Standard 1.70in. (43.18mm)
Low Profile 1.20in. (30.48mm)
184-pin DIMM (standard)
184-pin DIMM (lead-free)
Latency
7.5ns (133 MHz) 266 MT/s, CL = 2
7.5ns (133 MHz) 266 MT/s, CL = 2
7.5ns (133 MHz) 266 MT/s, CL = 2.5
10ns (100 MHz) 200 MT/s, CL = 2
Standard 1.75in. (44.45mm)
Low-Profile 1.20in. (30.48mm)
Figure 1: 184-Pin DIMM (MO-206)
www.micron.com/products/modules
184-PIN DDR SDRAM RDIMM
1. Contact Micron for product availability.
2. CL = CAS (READ) latency; registered mode adds
one clock cycle to CL.
2
4K (A0–A9, A11, A12)
512Mb (128 Meg x 4)
4 (BA0, BA1)
8K (A0-A12)
1 (S0#)
1GB
8K
©2004 Micron Technology, Inc. All rights reserved.
1
4K (A0–A9, A11, A12)
1Gb (256 Meg x 4)
16K (A0-A13)
4 (BA0, BA1)
See Table 2 note
See Table 2 note
1 (S0#)
2GB
MARKING
8K
-26A
-262
-265
-202
G
Y
1
1
Web

Related parts for MT18VDDT6472G-265

MT18VDDT6472G-265 Summary of contents

Page 1

... Column Addressing 2K (A0–A9, A11) Module Rank Addressing pdf: 09005aef808a331f, source: 09005aef80858037 DD18C32_64_128_256x72G.fm - Rev. E 9/04 EN PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE. 256MB, 512MB, 1GB, 2GB (x72, ECC, SR) MT18VDDT3272 – 256MB MT18VDDT6472 – 512MB MT18VDDT12872 – 1GB MT18VDDT25672 – ...

Page 2

... MT18VDDT25672Y-202__ NOTE: 1. All part numbers end with a two-place code (not shown), designating component and PCB revisions. Consult factory for current revision codes. Example: MT18VDDT6472G-265B1. 2. Contact Micron for product availability. pdf: 09005aef808a331f, source: 09005aef80858037 DD18C32_64_128_256x72G.fm - Rev. E 9/04 EN 256MB, 512MB, 1GB, 2GB (x72, ECC, SR) ...

Page 3

... Back View U19 U20 U21 U22 U10 PIN 93 PIN 184 Indicates pin Indicates DDQ Micron Technology, Inc., reserves the right to change products or specifications without notice. 3 184-PIN DDR SDRAM RDIMM Pin Assignment (184-Pin DIMM Back) V 116 V 139 DQ4 ...

Page 4

... DQS is edge-aligned with READ data, centered in WRITE data. Used to capture data. Input/ Check Bits. Output 4 184-PIN DDR SDRAM RDIMM DESCRIPTION is applied and until DD Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved. ...

Page 5

... Supply Power Supply: +2.5V ±0.2V Supply Ground. SS Supply Serial EEPROM positive power supply: +2.3V to +3.6V. DDSPD NC — No Connect: These pins should be left unconnected. 5 184-PIN DDR SDRAM RDIMM DESCRIPTION Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved. ...

Page 6

... MT46V32M4TG (256MB); MT46V64M4TG (512MB); MT46V128M4TG (1GB); MT46V256M4TG (2GB) Lead-free modules use the following DDR SDRAM devices: MT46V32M4P (256MB); MT46V64M4P (512MB); MT46V128M4P (1GB); MT46V256M4TG (2GB) Micron Technology, Inc., reserves the right to change products or specifications without notice. 6 184-PIN DDR SDRAM RDIMM DQS CS# DM DQ4 ...

Page 7

... DDR SDRAM X 2 CK0# DDR SDRAM X 2 DDR SDRAM X 2 DDR SDRAM X 2 REGISTER X 2 SPD/EEPROM DDR SDRAMS DDR SDRAMS DDR SDRAMS DDR SDRAMS Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved. ...

Page 8

... MODE REGISTER SET command (with BA0 = 0 and BA1 = 0) and will retain the stored information until it is programmed again or the device loses power (except for bit A8, which is self-clearing). Micron Technology, Inc., reserves the right to change products or specifications without notice. 8 For more 2 C bus ...

Page 9

... M13 M12 M11 M10 Micron Technology, Inc., reserves the right to change products or specifications without notice. 9 Diagram Address Bus Mode Register (Mx) ...

Page 10

... A8 set to one, and bits A0–A6 set 133 the desired values. NA Micron device, JEDEC specifications recommend when a LOAD MODE REGISTER command is issued to Micron Technology, Inc., reserves the right to change products or specifications without notice T2n READ NOP ...

Page 11

... BA1 and BA0 (E13 and E12 for 256MB; E14 and E13 for 512MB, 1GB; or E15 and E14 for 2GB) must be “0, 1” to select the Extended Mode Register (vs. the base Mode Register). 2. QFC# is not supported. Micron Technology, Inc., reserves the right to change products or specifications without notice Address Bus ...

Page 12

... 1GB), or A0–A13 (2GB) provide row Micron Technology, Inc., reserves the right to change products or specifications without notice. 12 WE# ADDR NOTES Bank/Row 2 H Bank/Col 3 L Bank/Col ...

Page 13

... MAX UNITS + 0.310 – V – 0.310 V REF Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved. Q +0.5V DD NOTES V 32 32, 36 µA 47 µA ...

Page 14

... I DD4R DD4W REFC = RFC (MIN) DD5 t REFC = 15.625µs I DD5A I DD6 I DD7 Micron Technology, Inc., reserves the right to change products or specifications without notice. 14 MAX -26A/ -265/ -262 -202 UNITS NOTES 1,017 972 mA 20, 42 1,107 1,107 mA 20 21, 28, ...

Page 15

... CK I DD4W t t REFC = RFC (MIN REFC = 7.8125µs DD5A I DD6 I DD7 Micron Technology, Inc., reserves the right to change products or specifications without notice. 15 MAX -26A/ -262 -265/-202 UNITS NOTES 2,250 2,160 mA 20, 42 2,880 2,610 mA 20 21, 28, 44 ...

Page 16

... DD4R DD4W REFC = RFC (MIN REFC = 7.8125µs I DD5A I DD6 I DD7 Micron Technology, Inc., reserves the right to change products or specifications without notice. 16 MAX -26A/ -265/ -262 -202 UNITS NOTES 2,340 2,070 mA 20, 42 2,880 2,610 mA 20 ...

Page 17

... (MIN); DQ, DM and DQS REFC = RFC (MIN) t REFC = 7.8125µ (MIN); Address and control Micron Technology, Inc., reserves the right to change products or specifications without notice. 17 184-PIN DDR SDRAM RDIMM = +2.5V ±0.2V DD MAX -26A/ SYMBOL -262 -265 I 0 1,215 ...

Page 18

... QHS t QHS t RAS RAP 256MB 512MB, 1GB RFC 2GB 120 t RCD 15 Micron Technology, Inc., reserves the right to change products or specifications without notice. 18 MIN MAX UNITS 2.5 3.5 pF – -262 MAX UNITS NOTES +0. 0. 0.55 CK ...

Page 19

... REFC 512MB, 1GB, 2GB 256MB t REFI 512MB, 1GB, 2GB t VTD 0 256MB 512MB XSNR 1GB 127.5 t XSRD 200 Micron Technology, Inc., reserves the right to change products or specifications without notice. 19 -262 MAX UNITS NOTES 0.6 CK ...

Page 20

... RC 65 256MB, t RFC 75 512MB, 1GB t RCD RPRE 0.9 t RPST 0.4 t RRD 15 t WPRE 0.25 t WPRES 0 t WPST 0.4 Micron Technology, Inc., reserves the right to change products or specifications without notice. 20 -202 MAX MIN MAX UNITS NOTES +0.75 -0.8 +0 0.55 0.45 0. 0.55 0.45 0. 0.6 ns 0.6 ...

Page 21

... REFI 512MB, 1GB, 2GB t VTD 0 256MB 512MB XSNR 127.5 1GB t XSRD 200 Micron Technology, Inc., reserves the right to change products or specifications without notice. 21 -202 MAX MIN MAX UNITS DQSQ QH - DQSQ ns 140.6 140.6 µ ...

Page 22

... CK that meets the minimum measurements is the largest multi that meets the maximum absolute t RAS. Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved. (peak to OUT t IS has an addi- stabi- REF REF ...

Page 23

... HP min is the lesser of CL minimum and 3.450 3.400 3.350 3.100 3.050 3.000 2.275 2.238 2.200 47/53 46.5/54.5 46/54 45.5/55.5 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved. (DC) IL 1V/ns (2V and t CH 3.300 3.250 2.950 2.900 2.163 2.125 ...

Page 24

... Q are 0V, provided a minimum series resistance is used between the specified 0.5 1 OUT Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved 1.5V for a undershoot: IL 3ns and the , and V must REF TT 2.0 2.5 ...

Page 25

... LOW. DD 49. The -335 speed grade will operate with 2Q are similar, = 40ns and DD frequency. Micron Technology, Inc., reserves the right to change products or specifications without notice. 25 184-PIN DDR SDRAM RDIMM t RAS (MAX) = 120,000ns at any slower ©2004 Micron Technology, Inc. All rights reserved. t ...

Page 26

... Micron Technology, Inc., reserves the right to change products or specifications without notice and V Q Ramp DD DD Apply V and V REF TT CKE must be LVCMOS Low Apply stable CLOCKs Wait at least 200us Bring CKE High with a NOP command ...

Page 27

... LOW Time Time Data Before CK HIGH, CK# LOW Data After CK HIGH, CK# LOW max, after RESET# is taken HIGH. act 1 V/ns. 0.5 V/ns and 1V/ns. 1V/ns. Micron Technology, Inc., reserves the right to change products or specifications without notice. 27 184-PIN DDR SDRAM RDIMM 0°C T +70° +2.5V ±0.2V DD MIN MAX UNITS ...

Page 28

... DDR SDRAM RDIMM +70°C MAX UNITS 170 MHz 60 % 100 100 100 ps 4 V/ R=60 R= Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved. NOTES ...

Page 29

... NOTE: 1. Micron Technology, Inc. recommends a minimum air flow of 1 meter/second (~197 LFM) across the module. 2. The component case temperature measurements shown above were obtained experimentally. The typical system to be used for experimental purposes is a dual-processor 600 MHz work station, fully loaded, with four comparable registered memory modules ...

Page 30

... Figure 14: Definition of Start and Stop SCL SDA DATA STABLE 30 184-PIN DDR SDRAM RDIMM START BIT 8 Acknowledge Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved. STOP BIT 9 ...

Page 31

... DH 31 184-PIN DDR SDRAM RDIMM CHIP ENABLE SA2 SA1 1 0 SA2 SA1 t SU:DAT t SU:STO Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved SA0 RW SA0 RW t BUF UNDEFINED ...

Page 32

... LOW 1 0.3 f SCL 400 KHz t SU:DAT 100 t SU:STA 0.6 t SU:STO 0.6 t WRC 10 ms Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved. UNITS µA µA µ NOTES µs 1 µ µs µ ...

Page 33

... Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved ...

Page 34

... Release 1.0 -262 -26A -265 -202 MICRON (Continued) 01–12 Variable Data 1–9 0 Variable Data Micron Technology, Inc., reserves the right to change products or specifications without notice. 34 184-PIN DDR SDRAM RDIMM ...

Page 35

... MT18VDDT3272 MT18VDDT6472 MT18VDDT12872 Variable Data Variable Data – RP. Actual device spec value is 40 ns. Micron Technology, Inc., reserves the right to change products or specifications without notice. 35 Variable Data Variable Data Variable Data Variable Data – – ©2004 Micron Technology, Inc. All rights reserved. ...

Page 36

... Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved ...

Page 37

... CK 13ns (-262/-26A/-265/-202) MAX t DQSQ 0.5ns (-262/-26A/-265) t QHS 0.75ns (-262/-26A/-265) Standard/Low-Profile (Continued Micron Technology, Inc., reserves the right to change products or specifications without notice. 37 MT18VDDT25672 50 0.6ns (-202) 60 0.6ns (-202 60ns (-262 70ns (-202) ...

Page 38

... MIN 38 184-PIN DDR SDRAM RDIMM U10 0.700 (17.78) TYP. 0.394 (10.00) TYP. 1.95 (49.53) PIN 92 U20 U21 U22 PIN 93 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved. 0.125 (3.175) MAX 1.705 (43.31) 1.695 (43.05) 0.054 (1.37) 0.046 (1.17) ...

Page 39

... S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900 E-mail: prodmktg@micron.com, Internet: http://www.micron.com, Customer Comment Line: 800-932-4992 Micron, the M logo, and the Micron logo are trademarks and/or service marks of Micron Technology, Inc. All other trademarks are the property of their respective owners. ...

Related keywords