MT18VDDT6472G-265 Micron, MT18VDDT6472G-265 Datasheet - Page 35
MT18VDDT6472G-265
Manufacturer Part Number
MT18VDDT6472G-265
Description
512MB DDR SDRAM RDIMM
Manufacturer
Micron
Datasheet
1.MT18VDDT6472G-265.pdf
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Table 23: Serial Presence-Detect Matrix – 256MB, 512MB, and 1GB (Continued)
“1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW”; notes appear on page 35
NOTE:
pdf: 09005aef808a331f, source: 09005aef80858037
DD18C32_64_128_256x72G.fm - Rev. E 9/04 EN
99-127 Manufacturer-specific Data (RSVD)
BYTE
95-98 Module Serial Number
1. Value for -262 and -26A
2. The value of
3. The JEDEC SPD specification allows fast or slow slew rate values for these bytes. The worst-case (slow slew rate) value is
94
represented here. Systems requiring the fast slew rate setup and hold values are supported, provided the faster mini-
mum slew rate is met.
Week of Manufacture in BCD
t
RAS used for -262/-26A/-265 modules is calculated from
DESCRIPTION
t
CK set to 7ns (0x70) for optimum BIOS compatibility. Actual device spec. vaule is 7.5ns.
ENTRY (VERSION)
256MB, 512MB, 1GB, 2GB (x72, ECC, SR)
35
MT18VDDT3272 MT18VDDT6472 MT18VDDT12872
Variable Data
Variable Data
Micron Technology, Inc., reserves the right to change products or specifications without notice.
184-PIN DDR SDRAM RDIMM
t
RC -
–
t
RP. Actual device spec value is 40 ns.
Variable Data
Variable Data
–
©2004 Micron Technology, Inc. All rights reserved.
Variable Data
Variable Data
–
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