MT28F128J3FS-11ET Micron, MT28F128J3FS-11ET Datasheet - Page 11

• Manufacturer Part Number: MT28F128J3FS-11ET
• Description: 32Mb Q-flash memory
• Manufacturer: Micron

COMMAND DEFINITIONS
operations from the status register, query, identifier
codes, or blocks are enabled. Placing V
ables BLOCK ERASE, PROGRAM, and LOCK BIT CON-
*Notes appear on the next page.
128Mb, 64Mb, 32Mb Q-Flash Memory
MT28F640J3_7.p65 – Rev. 6, Pub. 8/02
COMMAND
READ ARRAY
READ IDENTIFIER
CODES
READ QUERY
READ STATUS
REGISTER
CLEAR STATUS
REGISTER
WRITE TO BUFFER
WORD/BYTE
PROGRAM
BLOCK ERASE
BLOCK ERASE,
PROGRAM SUSPEND
BLOCK ERASE,
PROGRAM RESUME
CONFIGURATION
SET BLOCK LOCK BITS
CLEAR BLOCK
LOCK BITS
PROTECTION
PROGRAM
When the V
PEN
voltage is less than V
Micron Q-Flash Memory Command Set Definitions
COMMAND REQ’D
SCALABLE
OR BASIC
SCS/BCS
SCS/BCS
SCS/BCS
SCS/BCS
SCS/BCS
SCS/BCS
SCS/BCS
SCS/BCS
SCS/BCS
SET
SCS
SCS
SCS
SCS
2
PENH
PPLK
CYCLES
BUS
> 2
2
, only READ
1
2
1
2
2
1
1
2
2
2
on V
2
2
PEN
WRITE
WRITE
WRITE
WRITE
WRITE
WRITE
WRITE
WRITE
WRITE
WRITE
WRITE
WRITE
WRITE
WRITE
OPER
en-
Table 4
FIRST BUS CYCLE
3
11
ADDR
FIGURATION operations. Device operations are se-
lected by writing specific commands into the CEL, as
seen in Table 4.
BA
BA
X
X
X
X
X
X
X
X
X
X
X
X
4
DATA
D0h
C0h
FFh
90h
98h
70h
50h
E8h
40h
10h
20h
B0h
B8h
60h
60h
Micron Technology, Inc., reserves the right to change products or specifications without notice.
or
5, 6
WRITE
WRITE
WRITE
WRITE
WRITE
WRITE
WRITE
OPER
READ
READ
READ
128Mb, 64Mb, 32Mb
SECOND BUS CYCLE
Q-FLASH MEMORY
3
ADDR
QA
BA
BA
BA
PA
PA
IA
X
X
X
1
4
DATA
SRD
D0h
D0h
01h
QD
PD
CC
PD
ID
N
©2002, Micron Technology, Inc.
5, 6
9, 10, 11
NOTES*
12, 13
11, 12
12, 14
12
15
7
8